Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties1 figure
1 preparation1 characterization1 figure
1 preparation3 characterizations11 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | A exciton | 670nm | — | — | ||
| Absorption Peak | B exciton | 610nm | — | — | ||
| Junction Overlap Area | mean junction overlap area | 0.33um² | — | |||
| Device Channel Length | channel length | 100um | — | — | ||
| Device Channel Width | channel width | 19.55mm | — | — | ||
| Film Thickness | network thickness | 19.6nm | — | |||
| Electrical Resistance | zero-strain resistance R₀ | 1.38kΩ | — | — | ||
| Electrical Conductivity | network conductivity | 190S/m | — | — | ||
| Fet On Off Ratio | gauge factor GNet | 2.25 | — | |||
| Gauge Factor Component | dimensional contribution to gauge factor | 1.4 | — | |||
| Gauge Factor Component | intrinsic contribution to gauge factor | 1.9 | — | |||
| Junction Resistance Strain Response | junction resistance | increases linearly with strain | — | |||
| Nanosheet Resistance Strain Response | nanosheet resistance | remains constant with strain | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties1 figure
1 preparation1 characterization1 figure
1 preparation3 characterizations11 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | A exciton | 670nm | — | — | ||
| Absorption Peak | B exciton | 610nm | — | — | ||
| Junction Overlap Area | mean junction overlap area | 0.33um² | — | |||
| Device Channel Length | channel length | 100um | — | — | ||
| Device Channel Width | channel width | 19.55mm | — | — | ||
| Film Thickness | network thickness | 19.6nm | — | |||
| Electrical Resistance | zero-strain resistance R₀ | 1.38kΩ | — | — | ||
| Electrical Conductivity | network conductivity | 190S/m | — | — | ||
| Fet On Off Ratio | gauge factor GNet | 2.25 | — | |||
| Gauge Factor Component | dimensional contribution to gauge factor | 1.4 | — | |||
| Gauge Factor Component | intrinsic contribution to gauge factor | 1.9 | — | |||
| Junction Resistance Strain Response | junction resistance | increases linearly with strain | — | |||
| Nanosheet Resistance Strain Response | nanosheet resistance | remains constant with strain | — |
Related documents with shared materials, methods, properties, or citations.
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Deterministic Thermal Sculpting of Large-Scale 2D Semiconductor Nanocircuits
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Impact of thermal annealing on the interaction between monolayer MoS2 and Au
Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management
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Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties1 figure
1 preparation1 characterization1 figure
1 preparation3 characterizations11 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | A exciton | 670nm | — | — | ||
| Absorption Peak | B exciton | 610nm | — | — | ||
| Junction Overlap Area | mean junction overlap area | 0.33um² | — | |||
| Device Channel Length | channel length | 100um | — | — | ||
| Device Channel Width | channel width | 19.55mm | — | — | ||
| Film Thickness | network thickness | 19.6nm | — | |||
| Electrical Resistance | zero-strain resistance R₀ | 1.38kΩ | — | — | ||
| Electrical Conductivity | network conductivity | 190S/m | — | — | ||
| Fet On Off Ratio | gauge factor GNet | 2.25 | — | |||
| Gauge Factor Component | dimensional contribution to gauge factor | 1.4 | — | |||
| Gauge Factor Component | intrinsic contribution to gauge factor | 1.9 | — | |||
| Junction Resistance Strain Response | junction resistance | increases linearly with strain | — | |||
| Nanosheet Resistance Strain Response | nanosheet resistance | remains constant with strain | — |
Related documents with shared materials, methods, properties, or citations.
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Deterministic Thermal Sculpting of Large-Scale 2D Semiconductor Nanocircuits
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Impact of thermal annealing on the interaction between monolayer MoS2 and Au
Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management
Heterointerface-Engineered Electrochemically Exfoliated MoS2/WS2 2D-Layered Nanocomposite for Efficient Visible-Light Photocatalytic Degradation of Sorafenib
Silicon Integrated Photonic Waveguide Polarizers with 2D MoS2 Films
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties1 figure
1 preparation1 characterization1 figure
1 preparation3 characterizations11 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | A exciton | 670nm | — | — | ||
| Absorption Peak | B exciton | 610nm | — | — | ||
| Junction Overlap Area | mean junction overlap area | 0.33um² | — | |||
| Device Channel Length | channel length | 100um | — | — | ||
| Device Channel Width | channel width | 19.55mm | — | — | ||
| Film Thickness | network thickness | 19.6nm | — | |||
| Electrical Resistance | zero-strain resistance R₀ | 1.38kΩ | — | — | ||
| Electrical Conductivity | network conductivity | 190S/m | — | — | ||
| Fet On Off Ratio | gauge factor GNet | 2.25 | — | |||
| Gauge Factor Component | dimensional contribution to gauge factor | 1.4 | — | |||
| Gauge Factor Component | intrinsic contribution to gauge factor | 1.9 | — | |||
| Junction Resistance Strain Response | junction resistance | increases linearly with strain | — | |||
| Nanosheet Resistance Strain Response | nanosheet resistance | remains constant with strain | — |
Related documents with shared materials, methods, properties, or citations.
Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors
Deterministic Thermal Sculpting of Large-Scale 2D Semiconductor Nanocircuits
Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
Gated MoS2/SiN Nanochannel for Tunable Ion Transport and Protein Translocation
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-κ Dielectric
Impact of thermal annealing on the interaction between monolayer MoS2 and Au
Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure
A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management
Heterointerface-Engineered Electrochemically Exfoliated MoS2/WS2 2D-Layered Nanocomposite for Efficient Visible-Light Photocatalytic Degradation of Sorafenib
Silicon Integrated Photonic Waveguide Polarizers with 2D MoS2 Films
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
