Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.19 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.44 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
3 preparations2 characterizations3 figures
ExperimentalMoS₂-xOxStudied Material
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.51 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.19 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.44 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
3 preparations2 characterizations3 figures
ExperimentalMoS₂-xOxStudied Material
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.51 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.19 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.44 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
3 preparations2 characterizations3 figures
ExperimentalMoS₂-xOxStudied Material
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.51 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.19 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.44 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.
3 preparations2 characterizations3 figures
ExperimentalMoS₂-xOxStudied Material
Oxygen-doped monolayer MoS₂-xOx FET sample with x = 0.51 formed by FIB irradiation followed by NO₂ exposure, transferred onto Au electrodes on SiO₂/Si.