Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | Rsheet | 7372kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4268kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4650kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 3393kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1631kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 2335kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1050kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1092kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 840kΩ/□ | — | |||
| Fet Mobility | W(NIDE-1)/G | 194ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 388ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 775ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 117ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 233ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 467ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 42ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 84ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 168ratio | — |
Related documents with shared materials, methods, properties, or citations.
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Scalable high-mobility graphene/hBN heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
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Electric conductivity in graphene: Kubo model versus a nonlocal quantum field theory model
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | Rsheet | 7372kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4268kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4650kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 3393kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1631kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 2335kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1050kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1092kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 840kΩ/□ | — | |||
| Fet Mobility | W(NIDE-1)/G | 194ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 388ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 775ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 117ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 233ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 467ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 42ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 84ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 168ratio | — |
Related documents with shared materials, methods, properties, or citations.
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Scalable high-mobility graphene/hBN heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction
Electric conductivity in graphene: Kubo model versus a nonlocal quantum field theory model
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | Rsheet | 7372kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4268kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4650kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 3393kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1631kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 2335kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1050kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1092kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 840kΩ/□ | — | |||
| Fet Mobility | W(NIDE-1)/G | 194ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 388ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 775ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 117ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 233ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 467ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 42ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 84ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 168ratio | — |
Related documents with shared materials, methods, properties, or citations.
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Scalable high-mobility graphene/hBN heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction
Electric conductivity in graphene: Kubo model versus a nonlocal quantum field theory model
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
3 preparations2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | Rsheet | 7372kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4268kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 4650kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 3393kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1631kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 2335kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1050kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 1092kΩ/□ | — | |||
| Fet Sheet Resistance | Rsheet | 840kΩ/□ | — | |||
| Fet Mobility | W(NIDE-1)/G | 194ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 388ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 775ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 117ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 233ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 467ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 42ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 84ratio | — | |||
| Fet Mobility | W(NIDE-1)/G | 168ratio | — |
Related documents with shared materials, methods, properties, or citations.
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Scalable high-mobility graphene/hBN heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction
Electric conductivity in graphene: Kubo model versus a nonlocal quantum field theory model
