Research paper
Experimental GrowthExperimental CharacterizationPhotovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction
Hojun Im, Masahiro Teraoka
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations11 properties2 figures
1 preparation1 characterization3 properties1 figure
2 preparations1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | thermal oxide thickness | 300nm | — | |||
| Layer Count | rf-MLG layer count | 65 | — | |||
| Thickness | rf-MLG thickness | 22nm | — | |||
| Thickness | rf-MLG step height | 35nm | — | |||
| Transmittance | transmittance at 550 nm | 30% | — | |||
| Transmittance | transmittance at 350 nm | 22% | — | |||
| Transmittance | transmittance at 1100 nm | 35% | — | |||
| Idealty Factor | Schottky junction ideality factor | 1.67 | — | |||
| Rectification Factor | rectification factor | 4.3 × 10^5 | — | |||
| Schottky Barrier Height | Schottky barrier height | 0.83eV | — | — | ||
| External Quantum Efficiency | EQE peak | 26% | — | |||
| Internal Quantum Efficiency | IQE peak | 97% | — | |||
| Photocurrent Timescale | charge extraction time | 1us | — | |||
| Photovoltage Timescale | recombination time | severalms | — | |||
| Raman Peak | regex-detected Raman peak | 2300cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 2030cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1745cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1477cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable high-mobility graphene/hBN heterostructures
Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
The Mechanical Behavior of Macroscale Single-crystal Graphene
Metallic NbS2 one-dimensional van der Waals heterostructures
Impact of Interdigitated Electrodes design on the Low Frequency and Random Telegraph Noise of Single-Layer Graphene Micro Ribbons
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations11 properties2 figures
1 preparation1 characterization3 properties1 figure
2 preparations1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | thermal oxide thickness | 300nm | — | |||
| Layer Count | rf-MLG layer count | 65 | — | |||
| Thickness | rf-MLG thickness | 22nm | — | |||
| Thickness | rf-MLG step height | 35nm | — | |||
| Transmittance | transmittance at 550 nm | 30% | — | |||
| Transmittance | transmittance at 350 nm | 22% | — | |||
| Transmittance | transmittance at 1100 nm | 35% | — | |||
| Idealty Factor | Schottky junction ideality factor | 1.67 | — | |||
| Rectification Factor | rectification factor | 4.3 × 10^5 | — | |||
| Schottky Barrier Height | Schottky barrier height | 0.83eV | — | — | ||
| External Quantum Efficiency | EQE peak | 26% | — | |||
| Internal Quantum Efficiency | IQE peak | 97% | — | |||
| Photocurrent Timescale | charge extraction time | 1us | — | |||
| Photovoltage Timescale | recombination time | severalms | — | |||
| Raman Peak | regex-detected Raman peak | 2300cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 2030cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1745cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1477cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable high-mobility graphene/hBN heterostructures
Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
The Mechanical Behavior of Macroscale Single-crystal Graphene
Metallic NbS2 one-dimensional van der Waals heterostructures
Impact of Interdigitated Electrodes design on the Low Frequency and Random Telegraph Noise of Single-Layer Graphene Micro Ribbons
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations11 properties2 figures
1 preparation1 characterization3 properties1 figure
2 preparations1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | thermal oxide thickness | 300nm | — | |||
| Layer Count | rf-MLG layer count | 65 | — | |||
| Thickness | rf-MLG thickness | 22nm | — | |||
| Thickness | rf-MLG step height | 35nm | — | |||
| Transmittance | transmittance at 550 nm | 30% | — | |||
| Transmittance | transmittance at 350 nm | 22% | — | |||
| Transmittance | transmittance at 1100 nm | 35% | — | |||
| Idealty Factor | Schottky junction ideality factor | 1.67 | — | |||
| Rectification Factor | rectification factor | 4.3 × 10^5 | — | |||
| Schottky Barrier Height | Schottky barrier height | 0.83eV | — | — | ||
| External Quantum Efficiency | EQE peak | 26% | — | |||
| Internal Quantum Efficiency | IQE peak | 97% | — | |||
| Photocurrent Timescale | charge extraction time | 1us | — | |||
| Photovoltage Timescale | recombination time | severalms | — | |||
| Raman Peak | regex-detected Raman peak | 2300cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 2030cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1745cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1477cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable high-mobility graphene/hBN heterostructures
Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
The Mechanical Behavior of Macroscale Single-crystal Graphene
Metallic NbS2 one-dimensional van der Waals heterostructures
Impact of Interdigitated Electrodes design on the Low Frequency and Random Telegraph Noise of Single-Layer Graphene Micro Ribbons
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations11 properties2 figures
1 preparation1 characterization3 properties1 figure
2 preparations1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | thermal oxide thickness | 300nm | — | |||
| Layer Count | rf-MLG layer count | 65 | — | |||
| Thickness | rf-MLG thickness | 22nm | — | |||
| Thickness | rf-MLG step height | 35nm | — | |||
| Transmittance | transmittance at 550 nm | 30% | — | |||
| Transmittance | transmittance at 350 nm | 22% | — | |||
| Transmittance | transmittance at 1100 nm | 35% | — | |||
| Idealty Factor | Schottky junction ideality factor | 1.67 | — | |||
| Rectification Factor | rectification factor | 4.3 × 10^5 | — | |||
| Schottky Barrier Height | Schottky barrier height | 0.83eV | — | — | ||
| External Quantum Efficiency | EQE peak | 26% | — | |||
| Internal Quantum Efficiency | IQE peak | 97% | — | |||
| Photocurrent Timescale | charge extraction time | 1us | — | |||
| Photovoltage Timescale | recombination time | severalms | — | |||
| Raman Peak | regex-detected Raman peak | 2300cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 2030cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1745cm⁻¹ | — | — | — | |
| Ir Band Position | IR band | 1477cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Scalable high-mobility graphene/hBN heterostructures
Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
A Wide Optical-Gap in Fully sp3-Like Hydrogenated Monolayer Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
The Mechanical Behavior of Macroscale Single-crystal Graphene
Metallic NbS2 one-dimensional van der Waals heterostructures
Impact of Interdigitated Electrodes design on the Low Frequency and Random Telegraph Noise of Single-Layer Graphene Micro Ribbons
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures