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1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental Characterization

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.

conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

Materials

graphene

C

Studied Material

Also known as

single-layer grapheneSLG

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.

conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

Materials

graphene

C

Studied Material

Also known as

single-layer grapheneSLG

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.

conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

Materials

graphene

C

Studied Material

Also known as

single-layer grapheneSLG

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.

conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.

7 preparations2 characterizations2 properties6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.

7 preparations2 characterizations1 property6 figures

ExperimentalCStudied Material

Materials

graphene

C

Studied Material

Also known as

single-layer grapheneSLG

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transport Response Exponent	ohmic conduction exponent n	0.98 to 1.0	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—
Transport Response Exponent	noise spectral dependence	1/f^gamma with gamma between 0.8 and 1.2	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transport Response Exponent	ohmic conduction exponent n	0.98 to 1.0	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—
Transport Response Exponent	noise spectral dependence	1/f^gamma with gamma between 0.8 and 1.2	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transport Response Exponent	ohmic conduction exponent n	0.98 to 1.0	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—
Transport Response Exponent	noise spectral dependence	1/f^gamma with gamma between 0.8 and 1.2	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transport Response Exponent	ohmic conduction exponent n	0.98 to 1.0	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—
Transport Response Exponent	noise spectral dependence	1/f^gamma with gamma between 0.8 and 1.2	C	SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g SLG micro-ribbon device with interdigitated Al electrodes; g		—