Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Intrinsic defect engineering of CVD grown monolayer MoS2 for tuneable functional nanodevices
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2
Enhanced THz emission and exciton transfer in monolayer MoS2/GaAs heterostructures
Strain-Enhanced Mobility of Monolayer MoS2
Quantum Dot Moiré from Crossed MoS2 Nanoribbons
Probing the Valley-Selective Tunneling Density of States in Monolayer-MoS2 based Resonant Tunneling Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Intrinsic defect engineering of CVD grown monolayer MoS2 for tuneable functional nanodevices
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2
Enhanced THz emission and exciton transfer in monolayer MoS2/GaAs heterostructures
Strain-Enhanced Mobility of Monolayer MoS2
Quantum Dot Moiré from Crossed MoS2 Nanoribbons
Probing the Valley-Selective Tunneling Density of States in Monolayer-MoS2 based Resonant Tunneling Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Intrinsic defect engineering of CVD grown monolayer MoS2 for tuneable functional nanodevices
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2
Enhanced THz emission and exciton transfer in monolayer MoS2/GaAs heterostructures
Strain-Enhanced Mobility of Monolayer MoS2
Quantum Dot Moiré from Crossed MoS2 Nanoribbons
Probing the Valley-Selective Tunneling Density of States in Monolayer-MoS2 based Resonant Tunneling Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers
Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Intrinsic defect engineering of CVD grown monolayer MoS2 for tuneable functional nanodevices
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2
Enhanced THz emission and exciton transfer in monolayer MoS2/GaAs heterostructures
Strain-Enhanced Mobility of Monolayer MoS2
Quantum Dot Moiré from Crossed MoS2 Nanoribbons
Probing the Valley-Selective Tunneling Density of States in Monolayer-MoS2 based Resonant Tunneling Devices
