Abstract

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS₂ ultra-thin quantum well based double barrier resonant tunneling device architecture compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D-sheet along the c-axis sandwiched in between Al₂O₃ tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Green’s function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non-conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS₂ provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).

Abstract

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS₂ ultra-thin quantum well based double barrier resonant tunneling device architecture compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D-sheet along the c-axis sandwiched in between Al₂O₃ tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Green’s function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non-conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS₂ provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).

Abstract

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS₂ ultra-thin quantum well based double barrier resonant tunneling device architecture compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D-sheet along the c-axis sandwiched in between Al₂O₃ tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Green’s function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non-conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS₂ provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).

Abstract

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS₂ ultra-thin quantum well based double barrier resonant tunneling device architecture compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D-sheet along the c-axis sandwiched in between Al₂O₃ tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Green’s function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non-conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS₂ provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).