Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Domitille Gérard; Michael Rosticher; Kenji Watanabe; Takashi Taniguchi; Julien Barjon; Stéphanie Buil; Jean-Pierre Hermier; Aymeric Delteil

doi:10.5281/zenodo.8028604

Paper

Atlas literature

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Domitille Gérard, Michael Rosticher, Kenji Watanabe, Takashi Taniguchi et al.

arXiv·2023·10.5281/zenodo.8028604·arXiv:2304.00130

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

6 preparations3 characterizations5 properties2 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

6 preparations4 characterizations3 properties3 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide | Matter42 Literature

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

Samples

60 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated to generate localized quantum emitters; sample referred to as WG1.

220 nm-thick hBN waveguide on 300 nm SiO₂/Si, irradiated with a higher dose to yield a localized ensemble of SPEs; sample referred to as WG2.

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