Magnetic field imaging by hBN quantum sensor nanoarray

Kento Sasaki; Yuki Nakamura; Hao Gu; Moeta Tsukamoto; Shu Nakaharai; Takuya Iwasaki; Kenji Watanabe; Takashi Taniguchi; Shinichi Ogawa; Yukinori Morita; Kensuke Kobayashi

doi:10.1038/s41567-022-01815-5

Paper details

Research paper

Experimental Characterization

Magnetic field imaging by hBN quantum sensor nanoarray

Kento Sasaki, Yuki Nakamura, Hao Gu, Moeta Tsukamoto et al.

arXiv preprint·2023·10.1038/s41567-022-01815-5·arXiv:2301.12645

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

3 preparations2 characterizations9 properties3 figures

ExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

3 preparations2 characterizations9 properties3 figures

ExperimentalhBNStudied MaterialAuCapping Or ContactTiCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitrideboron vacancy defect host

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Magnetic field imaging by hBN quantum sensor nanoarray | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN thickness	66nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o	—
Substrate Thickness	hBN thickness	36nm	hBN	Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Sensitivity	practical sensitivity	73.6µT/Hz⁰.5	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Zero Field Splitting	D	3472MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Strain Parameter	E	46MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field To Current Slope	Bz,wire/Iwire	-0.1705mT/mA	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Offset	Bcoil	4.8mT	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Response Slope	dΔf/dBz	56MHz/mT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Deviation	standard deviation σ	12µT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Laser Spot Size	diffraction-limited spot width	406nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN thickness	66nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o	—
Substrate Thickness	hBN thickness	36nm	hBN	Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Sensitivity	practical sensitivity	73.6µT/Hz⁰.5	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Zero Field Splitting	D	3472MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Strain Parameter	E	46MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field To Current Slope	Bz,wire/Iwire	-0.1705mT/mA	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Offset	Bcoil	4.8mT	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Response Slope	dΔf/dBz	56MHz/mT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Deviation	standard deviation σ	12µT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Laser Spot Size	diffraction-limited spot width	406nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN thickness	66nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o	—
Substrate Thickness	hBN thickness	36nm	hBN	Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Sensitivity	practical sensitivity	73.6µT/Hz⁰.5	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Zero Field Splitting	D	3472MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Strain Parameter	E	46MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field To Current Slope	Bz,wire/Iwire	-0.1705mT/mA	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Offset	Bcoil	4.8mT	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Response Slope	dΔf/dBz	56MHz/mT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Deviation	standard deviation σ	12µT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Laser Spot Size	diffraction-limited spot width	406nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN thickness	66nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o	—
Substrate Thickness	hBN thickness	36nm	hBN	Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Sensitivity	practical sensitivity	73.6µT/Hz⁰.5	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Zero Field Splitting	D	3472MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Odmr Strain Parameter	E	46MHz	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field To Current Slope	Bz,wire/Iwire	-0.1705mT/mA	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Offset	Bcoil	4.8mT	Au	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Response Slope	dΔf/dBz	56MHz/mT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Magnetic Field Deviation	standard deviation σ	12µT	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—
Laser Spot Size	diffraction-limited spot width	406nm	hBN	Device with hBN flake attached over a 3200 nm wide Au wire o Device with hBN flake attached over a 400 nm wide Au wire on	—

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Magnetic field imaging by hBN quantum sensor nanoarray

Samples

Device with hBN flake attached over a 3200 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Device with hBN flake attached over a 400 nm wide Au wire on Ti/SiO₂/Si, patterned with a V-B sensor nanoarray by He+ irradiation.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties