Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.
ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or ContactCCapping Or Contact
Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.
ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or ContactCCapping Or Contact
Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.
ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or ContactCCapping Or Contact
Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.
ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or ContactCCapping Or Contact
Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.