Free-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron Nitride

Paper details

Research paper

Experimental Characterization

Çağlar Samaner, Serkan Paçal, Görkem Mutlu, Kıvanç Uyanık et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 characterizations11 properties2 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

silicon dioxide

SiO₂

Substrate / Dielectric

Related documents with shared materials, methods, properties, or citations.

Free-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron Nitride | Matter42 Literature

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	1.848eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
PL Peak	PSB	1.683eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Shift	ZPL-PSB separation	165meV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	R∞	495kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	maximum measured count rate	150kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Lifetime	single-exponential decay time	3.45ns	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Photon Antibunching	g(2)(0)	0.12	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Secure Key Rate	SKR	238bps	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Quantum Bit Error Rate	QBER	8.95%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Brightness	brightness	10%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Clock Rate	encoding clock rate	1MHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	1.848eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
PL Peak	PSB	1.683eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Shift	ZPL-PSB separation	165meV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	R∞	495kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	maximum measured count rate	150kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Lifetime	single-exponential decay time	3.45ns	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Photon Antibunching	g(2)(0)	0.12	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Secure Key Rate	SKR	238bps	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Quantum Bit Error Rate	QBER	8.95%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Brightness	brightness	10%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Clock Rate	encoding clock rate	1MHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	1.848eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
PL Peak	PSB	1.683eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Shift	ZPL-PSB separation	165meV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	R∞	495kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	maximum measured count rate	150kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Lifetime	single-exponential decay time	3.45ns	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Photon Antibunching	g(2)(0)	0.12	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Secure Key Rate	SKR	238bps	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Quantum Bit Error Rate	QBER	8.95%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Brightness	brightness	10%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Clock Rate	encoding clock rate	1MHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	1.848eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
PL Peak	PSB	1.683eV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Shift	ZPL-PSB separation	165meV	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	R∞	495kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Peak Intensity	maximum measured count rate	150kHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Pl Lifetime	single-exponential decay time	3.45ns	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Photon Antibunching	g(2)(0)	0.12	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Secure Key Rate	SKR	238bps	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Quantum Bit Error Rate	QBER	8.95%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Brightness	brightness	10%	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—
Qkd Clock Rate	encoding clock rate	1MHz	hBN	Multilayer hBN structure drop-casted onto SiO₂/Si substrate;	—