Abstract

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moiré effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP) and the satellites even without a perpendicular electric field. In BLG, moreover, the application of a perpendicular electric field tunes the energy gap, which contrasts with the single-layer graphene (SLG) and is linked to the family of rhombohedral multilayer graphene. Therefore, the hBN/BLG superlattice is accompanied with non-trivial energy-band topology and a narrow energy band with van Hove singularities. By the dual gating, systematic engineering of the energy-band structure can be performed and the carrier concentration is fine-tunable. This is an extended version of a talk and a review of hBN/BLG superlattice physics and device fabrication.

Abstract

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moiré effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP) and the satellites even without a perpendicular electric field. In BLG, moreover, the application of a perpendicular electric field tunes the energy gap, which contrasts with the single-layer graphene (SLG) and is linked to the family of rhombohedral multilayer graphene. Therefore, the hBN/BLG superlattice is accompanied with non-trivial energy-band topology and a narrow energy band with van Hove singularities. By the dual gating, systematic engineering of the energy-band structure can be performed and the carrier concentration is fine-tunable. This is an extended version of a talk and a review of hBN/BLG superlattice physics and device fabrication.

Abstract

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moiré effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP) and the satellites even without a perpendicular electric field. In BLG, moreover, the application of a perpendicular electric field tunes the energy gap, which contrasts with the single-layer graphene (SLG) and is linked to the family of rhombohedral multilayer graphene. Therefore, the hBN/BLG superlattice is accompanied with non-trivial energy-band topology and a narrow energy band with van Hove singularities. By the dual gating, systematic engineering of the energy-band structure can be performed and the carrier concentration is fine-tunable. This is an extended version of a talk and a review of hBN/BLG superlattice physics and device fabrication.

Abstract

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moiré effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP) and the satellites even without a perpendicular electric field. In BLG, moreover, the application of a perpendicular electric field tunes the energy gap, which contrasts with the single-layer graphene (SLG) and is linked to the family of rhombohedral multilayer graphene. Therefore, the hBN/BLG superlattice is accompanied with non-trivial energy-band topology and a narrow energy band with van Hove singularities. By the dual gating, systematic engineering of the energy-band structure can be performed and the carrier concentration is fine-tunable. This is an extended version of a talk and a review of hBN/BLG superlattice physics and device fabrication.