Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties1 figure
9 preparations4 characterizations12 properties5 figures
11 preparations5 characterizations1 property3 figures
1 preparation1 characterization6 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | NbN layer | 45nm | — | |||
| Film Thickness | Pd layer | 4nm | — | |||
| Substrate Thickness | h-BN flake thickness | — | — | |||
| Feature Size | etched window width | 500nm | — | |||
| Film Transition Temperature | Tc | 7K | — | |||
| Film Transition Temperature | Tc range lower bound | 6K | — | |||
| Film Transition Temperature | Tc range upper bound | 11K | — | |||
| Upper Critical Field | Hc₂ | 14T | — | |||
| Contact Resistance | Rc | 45ohm | — | |||
| Contact Resistance Per Length | rhoC | 126ohm/um | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 256000000000cm⁻² | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 150000000000cm⁻² | — | |||
| Critical Current | Ic | 110nA | — | |||
| Critical Current Density | Jc | 40nA/um | — | |||
| Critical Current | Ic | 20nA | — | |||
| Contact Dimension | NbN/Pd strip width | 0.3um | — | |||
| Contact Dimension | NbN/Pd strip length | 7um | — | |||
| Channel Length | L | 0.69um | — | |||
| Channel Width | W | 2.9um | — |
Related documents with shared materials, methods, properties, or citations.
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Coherent detection of the oscillating acoustoelectric effect in graphene
Toward single-photon detection with superconducting niobium diselenide nanowires
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Engineering superconducting contacts transparent to a bipolar graphene
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Edge dependence of the Josephson current in the quantum Hall regime
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Thermal transport mapping in twisted double bilayer graphene
Coherent oscillations in weakly anharmonic NbSe2 qubit
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties1 figure
9 preparations4 characterizations12 properties5 figures
11 preparations5 characterizations1 property3 figures
1 preparation1 characterization6 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | NbN layer | 45nm | — | |||
| Film Thickness | Pd layer | 4nm | — | |||
| Substrate Thickness | h-BN flake thickness | — | — | |||
| Feature Size | etched window width | 500nm | — | |||
| Film Transition Temperature | Tc | 7K | — | |||
| Film Transition Temperature | Tc range lower bound | 6K | — | |||
| Film Transition Temperature | Tc range upper bound | 11K | — | |||
| Upper Critical Field | Hc₂ | 14T | — | |||
| Contact Resistance | Rc | 45ohm | — | |||
| Contact Resistance Per Length | rhoC | 126ohm/um | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 256000000000cm⁻² | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 150000000000cm⁻² | — | |||
| Critical Current | Ic | 110nA | — | |||
| Critical Current Density | Jc | 40nA/um | — | |||
| Critical Current | Ic | 20nA | — | |||
| Contact Dimension | NbN/Pd strip width | 0.3um | — | |||
| Contact Dimension | NbN/Pd strip length | 7um | — | |||
| Channel Length | L | 0.69um | — | |||
| Channel Width | W | 2.9um | — |
Related documents with shared materials, methods, properties, or citations.
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Coherent detection of the oscillating acoustoelectric effect in graphene
Toward single-photon detection with superconducting niobium diselenide nanowires
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Engineering superconducting contacts transparent to a bipolar graphene
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Edge dependence of the Josephson current in the quantum Hall regime
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Thermal transport mapping in twisted double bilayer graphene
Coherent oscillations in weakly anharmonic NbSe2 qubit
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties1 figure
9 preparations4 characterizations12 properties5 figures
11 preparations5 characterizations1 property3 figures
1 preparation1 characterization6 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | NbN layer | 45nm | — | |||
| Film Thickness | Pd layer | 4nm | — | |||
| Substrate Thickness | h-BN flake thickness | — | — | |||
| Feature Size | etched window width | 500nm | — | |||
| Film Transition Temperature | Tc | 7K | — | |||
| Film Transition Temperature | Tc range lower bound | 6K | — | |||
| Film Transition Temperature | Tc range upper bound | 11K | — | |||
| Upper Critical Field | Hc₂ | 14T | — | |||
| Contact Resistance | Rc | 45ohm | — | |||
| Contact Resistance Per Length | rhoC | 126ohm/um | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 256000000000cm⁻² | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 150000000000cm⁻² | — | |||
| Critical Current | Ic | 110nA | — | |||
| Critical Current Density | Jc | 40nA/um | — | |||
| Critical Current | Ic | 20nA | — | |||
| Contact Dimension | NbN/Pd strip width | 0.3um | — | |||
| Contact Dimension | NbN/Pd strip length | 7um | — | |||
| Channel Length | L | 0.69um | — | |||
| Channel Width | W | 2.9um | — |
Related documents with shared materials, methods, properties, or citations.
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Coherent detection of the oscillating acoustoelectric effect in graphene
Toward single-photon detection with superconducting niobium diselenide nanowires
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Engineering superconducting contacts transparent to a bipolar graphene
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Edge dependence of the Josephson current in the quantum Hall regime
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Thermal transport mapping in twisted double bilayer graphene
Coherent oscillations in weakly anharmonic NbSe2 qubit
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties1 figure
9 preparations4 characterizations12 properties5 figures
11 preparations5 characterizations1 property3 figures
1 preparation1 characterization6 properties1 figure
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Film Thickness | NbN layer | 45nm | — | |||
| Film Thickness | Pd layer | 4nm | — | |||
| Substrate Thickness | h-BN flake thickness | — | — | |||
| Feature Size | etched window width | 500nm | — | |||
| Film Transition Temperature | Tc | 7K | — | |||
| Film Transition Temperature | Tc range lower bound | 6K | — | |||
| Film Transition Temperature | Tc range upper bound | 11K | — | |||
| Upper Critical Field | Hc₂ | 14T | — | |||
| Contact Resistance | Rc | 45ohm | — | |||
| Contact Resistance Per Length | rhoC | 126ohm/um | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 256000000000cm⁻² | — | |||
| Carrier Density | hole doping under NbN/Pd contacts | 150000000000cm⁻² | — | |||
| Critical Current | Ic | 110nA | — | |||
| Critical Current Density | Jc | 40nA/um | — | |||
| Critical Current | Ic | 20nA | — | |||
| Contact Dimension | NbN/Pd strip width | 0.3um | — | |||
| Contact Dimension | NbN/Pd strip length | 7um | — | |||
| Channel Length | L | 0.69um | — | |||
| Channel Width | W | 2.9um | — |
Related documents with shared materials, methods, properties, or citations.
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Coherent detection of the oscillating acoustoelectric effect in graphene
Toward single-photon detection with superconducting niobium diselenide nanowires
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Engineering superconducting contacts transparent to a bipolar graphene
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Edge dependence of the Josephson current in the quantum Hall regime
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Thermal transport mapping in twisted double bilayer graphene
Coherent oscillations in weakly anharmonic NbSe2 qubit