Research paperExperimental CharacterizationDipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayersE. Katsipoulaki, N.G. Chatzarakis, E. Rigoutsou, D. Katrisioti et al.arXiv preprint·2026·arXiv:2606.04675AbstractWe report dipolar interlayer excitons in a MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hexagonal boron nitride. Low-temperature photoluminescence reveals a distinct emission peak at approximately 1.4 eV, attributed to radiative recombination of interlayer excitons. The emission blueshifts with increasing excitation power, indicating repulsive dipole-dipole interactions. Time-resolved photoluminescence shows nanosecond-scale lifetimes consistent with spatially separated electrons and holes across the two layers.Read more
Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization1 property2 figuresExperimentalMoSe₂Studied MaterialExpand
Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization2 properties2 figuresExperimentalMoS1.4Se0.6Studied MaterialExpand
MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.2 preparations5 characterizations8 properties3 figuresExperimentalMoS1.4Se0.6Studied MaterialMoSe₂Studied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayersE. Katsipoulaki, N.G. Chatzarakis, E. Rigoutsou, D. Katrisioti et al.arXiv preprint·2026·arXiv:2606.04675AbstractWe report dipolar interlayer excitons in a MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hexagonal boron nitride. Low-temperature photoluminescence reveals a distinct emission peak at approximately 1.4 eV, attributed to radiative recombination of interlayer excitons. The emission blueshifts with increasing excitation power, indicating repulsive dipole-dipole interactions. Time-resolved photoluminescence shows nanosecond-scale lifetimes consistent with spatially separated electrons and holes across the two layers.Read more
Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization1 property2 figuresExperimentalMoSe₂Studied MaterialExpand
Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization2 properties2 figuresExperimentalMoS1.4Se0.6Studied MaterialExpand
MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.2 preparations5 characterizations8 properties3 figuresExperimentalMoS1.4Se0.6Studied MaterialMoSe₂Studied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayersE. Katsipoulaki, N.G. Chatzarakis, E. Rigoutsou, D. Katrisioti et al.arXiv preprint·2026·arXiv:2606.04675AbstractWe report dipolar interlayer excitons in a MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hexagonal boron nitride. Low-temperature photoluminescence reveals a distinct emission peak at approximately 1.4 eV, attributed to radiative recombination of interlayer excitons. The emission blueshifts with increasing excitation power, indicating repulsive dipole-dipole interactions. Time-resolved photoluminescence shows nanosecond-scale lifetimes consistent with spatially separated electrons and holes across the two layers.Read more
Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization1 property2 figuresExperimentalMoSe₂Studied MaterialExpand
Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization2 properties2 figuresExperimentalMoS1.4Se0.6Studied MaterialExpand
MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.2 preparations5 characterizations8 properties3 figuresExperimentalMoS1.4Se0.6Studied MaterialMoSe₂Studied MaterialhBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayersE. Katsipoulaki, N.G. Chatzarakis, E. Rigoutsou, D. Katrisioti et al.arXiv preprint·2026·arXiv:2606.04675AbstractWe report dipolar interlayer excitons in a MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hexagonal boron nitride. Low-temperature photoluminescence reveals a distinct emission peak at approximately 1.4 eV, attributed to radiative recombination of interlayer excitons. The emission blueshifts with increasing excitation power, indicating repulsive dipole-dipole interactions. Time-resolved photoluminescence shows nanosecond-scale lifetimes consistent with spatially separated electrons and holes across the two layers.Read more
Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization1 property2 figuresExperimentalMoSe₂Studied MaterialExpand
Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.1 preparation1 characterization2 properties2 figuresExperimentalMoS1.4Se0.6Studied MaterialExpand
MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.2 preparations5 characterizations8 properties3 figuresExperimentalMoS1.4Se0.6Studied MaterialMoSe₂Studied MaterialhBNSubstrate / DielectricExpand