Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

V. Ryzhii; C. Tang; T. Otsuji; M. Ryzhii; V. Mitin; M. S. Shur

doi:10.1063/5.0211116

Paper details

Research paper

TheoreticalComputed Raman

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii et al.

arXiv preprint·2024·10.1063/5.0211116·arXiv:2403.06373

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

No measurements recorded

SimulatedCStudied Materialh-BNSubstrate / Dielectricb-PStudied MaterialPxAs₁-xStudied MaterialAlCapping Or Contact

Materials

graphene

Studied Material

Also known as

GCgraphene channel

Variables

dimensionality= 2D

studied material

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Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts | Matter42 Literature

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Samples

Theoretical graphene FET bolometer device with graphene channel and composite h-BN/b-P/h-BN gate barrier layer under an Al metal gate, including side contacts and substrate as depicted in the model structure.

Materials

Why these are connected

Simulations

Simulations

Simulations

Simulations