Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

M. Ryzhii; V. Ryzhii; M. S. Shur; V. Mitin; C. Tang; T. Otsuji

doi:10.1063/5.0160899

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Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

M. Ryzhii, V. Ryzhii, M. S. Shur, V. Mitin et al.

arXiv preprint·2023·10.1063/5.0160899·arXiv:2306.01975

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Graphene-channel field-effect transistor bolometric detector with composite h-BN/black-P/h-BN gate barrier layer and aluminum metal gate, analyzed theoretically for terahertz operation.

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SimulatedCStudied MaterialBNSubstrate / DielectricPStudied MaterialAlCapping Or Contact

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