purposeself-consistent electrostatic calculation of carrier density and superlattice potential under double-gate geometry
n0 cm^-21,000,000,000,000,000
gate voltages{"VBV":[-9,12],"VMV":1}
grounded graphenetrue
boundary conditionnonlinear electrostatic boundary condition from quantum capacitance relation
geometry parameters{"Lnm":300,"Snm":80,"h0nm":150,"hbnm":10,"hgnm":10,"htnm":5}
fermi velocity modelvF(n) = [0.85 + 0.035 ln(n0/n)] × 10⁶ m/s