Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Is the Doped MoS2 Basal Plane an Efficient Hydrogen Evolution Catalyst? Calculations of Voltage-Dependent Activation Energy

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Is the Doped MoS2 Basal Plane an Efficient Hydrogen Evolution Catalyst? Calculations of Voltage-Dependent Activation Energy

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Is the Doped MoS2 Basal Plane an Efficient Hydrogen Evolution Catalyst? Calculations of Voltage-Dependent Activation Energy

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Is the Doped MoS2 Basal Plane an Efficient Hydrogen Evolution Catalyst? Calculations of Voltage-Dependent Activation Energy