Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Cr₂Ge₂Te₆/hBN/WSe₂/hBN/Cr₂Ge₂Te₆ vertical vdW light-emitting diode encapsulated with hBN films on a Si/SiO₂ wafer; the bottom and top Cr₂Ge₂Te₆ contacts have thicknesses of about 20 nm and 75 nm, respectively.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Cr₂Ge₂Te₆/hBN/WSe₂/hBN/Cr₂Ge₂Te₆ vertical vdW light-emitting diode encapsulated with hBN films on a Si/SiO₂ wafer; the bottom and top Cr₂Ge₂Te₆ contacts have thicknesses of about 20 nm and 75 nm, respectively.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Cr₂Ge₂Te₆/hBN/WSe₂/hBN/Cr₂Ge₂Te₆ vertical vdW light-emitting diode encapsulated with hBN films on a Si/SiO₂ wafer; the bottom and top Cr₂Ge₂Te₆ contacts have thicknesses of about 20 nm and 75 nm, respectively.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Cr₂Ge₂Te₆/hBN/WSe₂/hBN/Cr₂Ge₂Te₆ vertical vdW light-emitting diode encapsulated with hBN films on a Si/SiO₂ wafer; the bottom and top Cr₂Ge₂Te₆ contacts have thicknesses of about 20 nm and 75 nm, respectively.