Research paper
Experimental CharacterizationTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
2 characterizations7 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E12g | 244cm⁻¹ | — | |||
| Raman Peak | A1g | 251.6cm⁻¹ | — | |||
| Raman Peak | 2E1g | 352.5cm⁻¹ | — | |||
| Raman Peak | A1g+LA | 365.1cm⁻¹ | — | |||
| Raman Peak | 2A1g-LA | 387.6cm⁻¹ | — | |||
| PL Peak | indirect transition | 1.36eV | — | |||
| PL Peak | direct transition | 1.6eV | — | |||
| Substrate Thickness | WSe₂ film thickness | 41nm | — | |||
| Fet On Off Ratio | on/off ratio | 173000 | — | |||
| Fet Threshold Voltage | open-circuit voltage under illumination | 0.4V | — | |||
| Fet Threshold Voltage | open-circuit voltage | 0.58V | — | |||
| Fet Mobility | zero-bias responsivity | 5.77A/W | — | |||
| Fet Sheet Resistance | detectivity | 187000000000Jones | — |
Related documents with shared materials, methods, properties, or citations.
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
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Strain Correlated Linearly Polarized Photoluminescence in WS2/WSe2 Moiré Superlattices
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Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
2 characterizations7 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E12g | 244cm⁻¹ | — | |||
| Raman Peak | A1g | 251.6cm⁻¹ | — | |||
| Raman Peak | 2E1g | 352.5cm⁻¹ | — | |||
| Raman Peak | A1g+LA | 365.1cm⁻¹ | — | |||
| Raman Peak | 2A1g-LA | 387.6cm⁻¹ | — | |||
| PL Peak | indirect transition | 1.36eV | — | |||
| PL Peak | direct transition | 1.6eV | — | |||
| Substrate Thickness | WSe₂ film thickness | 41nm | — | |||
| Fet On Off Ratio | on/off ratio | 173000 | — | |||
| Fet Threshold Voltage | open-circuit voltage under illumination | 0.4V | — | |||
| Fet Threshold Voltage | open-circuit voltage | 0.58V | — | |||
| Fet Mobility | zero-bias responsivity | 5.77A/W | — | |||
| Fet Sheet Resistance | detectivity | 187000000000Jones | — |
Related documents with shared materials, methods, properties, or citations.
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Strain Correlated Linearly Polarized Photoluminescence in WS2/WSe2 Moiré Superlattices
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
2 characterizations7 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E12g | 244cm⁻¹ | — | |||
| Raman Peak | A1g | 251.6cm⁻¹ | — | |||
| Raman Peak | 2E1g | 352.5cm⁻¹ | — | |||
| Raman Peak | A1g+LA | 365.1cm⁻¹ | — | |||
| Raman Peak | 2A1g-LA | 387.6cm⁻¹ | — | |||
| PL Peak | indirect transition | 1.36eV | — | |||
| PL Peak | direct transition | 1.6eV | — | |||
| Substrate Thickness | WSe₂ film thickness | 41nm | — | |||
| Fet On Off Ratio | on/off ratio | 173000 | — | |||
| Fet Threshold Voltage | open-circuit voltage under illumination | 0.4V | — | |||
| Fet Threshold Voltage | open-circuit voltage | 0.58V | — | |||
| Fet Mobility | zero-bias responsivity | 5.77A/W | — | |||
| Fet Sheet Resistance | detectivity | 187000000000Jones | — |
Related documents with shared materials, methods, properties, or citations.
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Strain Correlated Linearly Polarized Photoluminescence in WS2/WSe2 Moiré Superlattices
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
2 characterizations7 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E12g | 244cm⁻¹ | — | |||
| Raman Peak | A1g | 251.6cm⁻¹ | — | |||
| Raman Peak | 2E1g | 352.5cm⁻¹ | — | |||
| Raman Peak | A1g+LA | 365.1cm⁻¹ | — | |||
| Raman Peak | 2A1g-LA | 387.6cm⁻¹ | — | |||
| PL Peak | indirect transition | 1.36eV | — | |||
| PL Peak | direct transition | 1.6eV | — | |||
| Substrate Thickness | WSe₂ film thickness | 41nm | — | |||
| Fet On Off Ratio | on/off ratio | 173000 | — | |||
| Fet Threshold Voltage | open-circuit voltage under illumination | 0.4V | — | |||
| Fet Threshold Voltage | open-circuit voltage | 0.58V | — | |||
| Fet Mobility | zero-bias responsivity | 5.77A/W | — | |||
| Fet Sheet Resistance | detectivity | 187000000000Jones | — |
Related documents with shared materials, methods, properties, or citations.
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Strain Correlated Linearly Polarized Photoluminescence in WS2/WSe2 Moiré Superlattices
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Layer-dependent Charge Transfer and inter-layer coupling in WSe2/Graphene Heterostructures