Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Arup Kumar Paul; Manas Ranjan Sahu; Kenji Watanabe; Takashi Taniguchi; J. K. Jain; Ganpathy Murthy; Anindya Das

doi:10.1126/science.aar4061

Paper details

Research paper

Experimental CharacterizationTheoretical

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Arup Kumar Paul, Manas Ranjan Sahu, Kenji Watanabe, Takashi Taniguchi et al.

arXiv preprint·2022·10.1126/science.aar4061·arXiv:2205.00710

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

1 characterization6 properties2 figures

ExperimentalCStudied MaterialhBNSubstrate / DielectricCSubstrate / Dielectric

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

No measurements recorded

SimulatedCStudied Material

Materials

graphene

Studied Material

Also known as

monolayer graphene

Variables

dimensionality= 2D

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Transmittance	tdiff at (-1,1) plateau	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t at 8 T	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	critical bias V* b	±60µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t range	0.3-0.6	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	2Δ bias window	120µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	high-bias transmittance	0	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Transmittance	tdiff at (-1,1) plateau	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t at 8 T	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	critical bias V* b	±60µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t range	0.3-0.6	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	2Δ bias window	120µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	high-bias transmittance	0	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Transmittance	tdiff at (-1,1) plateau	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t at 8 T	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	critical bias V* b	±60µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t range	0.3-0.6	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	2Δ bias window	120µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	high-bias transmittance	0	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Transmittance	tdiff at (-1,1) plateau	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t at 8 T	0.4	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	critical bias V* b	±60µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	t range	0.3-0.6	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Threshold Voltage	2Δ bias window	120µV	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—
Fet Transmittance	high-bias transmittance	0	C	hBN-encapsulated monolayer graphene dual-gated pn junction d	—

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 state

Samples

hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.

Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations