Research paperExperimental CharacterizationTheoreticalElectrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 stateArup Kumar Paul, Manas Ranjan Sahu, Kenji Watanabe, Takashi Taniguchi et al.arXiv preprint·2022·10.1126/science.aar4061·arXiv:2205.00710AbstractWe report bias-dependent tunnel transport through a ν = 0 region in an hBN-encapsulated monolayer graphene pn junction with graphite gates. Finite tunneling is observed between ν = ±1 quantum Hall edge states at magnetic fields above 3 T and low bias, while tunneling is sharply suppressed above a critical bias. Hartree-Fock calculations suggest that a canted antiferromagnetic (CAF) order parameter in the ν = 0 strip accounts for the observations, and that bias-induced charge buildup collapses the CAF order and switches tunneling off.Read more
hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCSubstrate / DielectricExpand
Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.No measurements recordedSimulatedCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 stateArup Kumar Paul, Manas Ranjan Sahu, Kenji Watanabe, Takashi Taniguchi et al.arXiv preprint·2022·10.1126/science.aar4061·arXiv:2205.00710AbstractWe report bias-dependent tunnel transport through a ν = 0 region in an hBN-encapsulated monolayer graphene pn junction with graphite gates. Finite tunneling is observed between ν = ±1 quantum Hall edge states at magnetic fields above 3 T and low bias, while tunneling is sharply suppressed above a critical bias. Hartree-Fock calculations suggest that a canted antiferromagnetic (CAF) order parameter in the ν = 0 strip accounts for the observations, and that bias-induced charge buildup collapses the CAF order and switches tunneling off.Read more
hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCSubstrate / DielectricExpand
Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.No measurements recordedSimulatedCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 stateArup Kumar Paul, Manas Ranjan Sahu, Kenji Watanabe, Takashi Taniguchi et al.arXiv preprint·2022·10.1126/science.aar4061·arXiv:2205.00710AbstractWe report bias-dependent tunnel transport through a ν = 0 region in an hBN-encapsulated monolayer graphene pn junction with graphite gates. Finite tunneling is observed between ν = ±1 quantum Hall edge states at magnetic fields above 3 T and low bias, while tunneling is sharply suppressed above a critical bias. Hartree-Fock calculations suggest that a canted antiferromagnetic (CAF) order parameter in the ν = 0 strip accounts for the observations, and that bias-induced charge buildup collapses the CAF order and switches tunneling off.Read more
hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCSubstrate / DielectricExpand
Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.No measurements recordedSimulatedCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in ν = 0 stateArup Kumar Paul, Manas Ranjan Sahu, Kenji Watanabe, Takashi Taniguchi et al.arXiv preprint·2022·10.1126/science.aar4061·arXiv:2205.00710AbstractWe report bias-dependent tunnel transport through a ν = 0 region in an hBN-encapsulated monolayer graphene pn junction with graphite gates. Finite tunneling is observed between ν = ±1 quantum Hall edge states at magnetic fields above 3 T and low bias, while tunneling is sharply suppressed above a critical bias. Hartree-Fock calculations suggest that a canted antiferromagnetic (CAF) order parameter in the ν = 0 strip accounts for the observations, and that bias-induced charge buildup collapses the CAF order and switches tunneling off.Read more
hBN-encapsulated monolayer graphene dual-gated pn junction device with bottom graphite gates, measured in six-contact Hall bar geometry.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricCSubstrate / DielectricExpand
Hartree-Fock modeled graphene ν = 0 strip in a pn junction between ν = ±1 quantum Hall regions.No measurements recordedSimulatedCStudied MaterialExpand