Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Matan Bocarsly; Indranil Roy; Vishal Bhardwaj; Matan Uzan; Patrick Ledwith; Gal Shavit; Nasrin Banu; Yaozhang Zhou; Yuri Myasoedov; Kenji Watanabe; Takashi Taniguchi; Yuval Oreg; Dan Parker; Yuval Ronen; Eli Zeldov

doi:10.1038/s41567-025-02786-z

Paper details

Research paper

Experimental CharacterizationTheoretical

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Matan Bocarsly, Indranil Roy, Vishal Bhardwaj, Matan Uzan et al.

2024·10.1038/s41567-025-02786-z·arXiv:2407.10675

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

1 preparation1 characterization6 properties3 figures

ExperimentalCStudied MaterialBNSubstrate / Dielectric

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

1 property

SimulatedCStudied Material

Materials

alternating-twist trilayer graphene

Studied Material

Also known as

tTLGtwisted trilayer graphene

Variables

twist_angle_deg= 1.3

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	device twist angle	1.3deg	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	conduction flat-band bandwidth	49.4meV	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	noninteracting continuum-model bandwidth	24meV	C	Theoretical alternating-twist trilayer graphene system treat	—
Carrier Density	n0	4.03e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nD	0.22e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nF	3.81e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Magnetic Field	minimum observed quantum oscillation field	56mT	C	Alternating-twist trilayer graphene device fabricated by dry	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	device twist angle	1.3deg	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	conduction flat-band bandwidth	49.4meV	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	noninteracting continuum-model bandwidth	24meV	C	Theoretical alternating-twist trilayer graphene system treat	—
Carrier Density	n0	4.03e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nD	0.22e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nF	3.81e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Magnetic Field	minimum observed quantum oscillation field	56mT	C	Alternating-twist trilayer graphene device fabricated by dry	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	device twist angle	1.3deg	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	conduction flat-band bandwidth	49.4meV	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	noninteracting continuum-model bandwidth	24meV	C	Theoretical alternating-twist trilayer graphene system treat	—
Carrier Density	n0	4.03e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nD	0.22e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nF	3.81e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Magnetic Field	minimum observed quantum oscillation field	56mT	C	Alternating-twist trilayer graphene device fabricated by dry	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	device twist angle	1.3deg	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	conduction flat-band bandwidth	49.4meV	C	Alternating-twist trilayer graphene device fabricated by dry	—
Bandwidth	noninteracting continuum-model bandwidth	24meV	C	Theoretical alternating-twist trilayer graphene system treat	—
Carrier Density	n0	4.03e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nD	0.22e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Carrier Density	nF	3.81e12 cm⁻²	C	Alternating-twist trilayer graphene device fabricated by dry	—
Magnetic Field	minimum observed quantum oscillation field	56mT	C	Alternating-twist trilayer graphene device fabricated by dry	—

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Samples

Alternating-twist trilayer graphene device fabricated by dry transfer and encapsulated in hBN, with top and bottom gates used to tune carrier density and displacement field.

Theoretical alternating-twist trilayer graphene system treated in a self-consistent mean-field model and a noninteracting continuum-model comparison.

Materials

Why these are connected

Processing

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Processing

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Processing

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Processing

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