Research paper
TheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | design emission wavelength | 445nm | — | |||
| Optical Performance | light extraction efficiency | 25.67% | — | |||
| Optical Performance | beam divergence angle | 5.7deg | — | |||
| Optical Field Intensity | main lobe intensity | 0.00752V/m | — |
Related documents with shared materials, methods, properties, or citations.
Inverse-Designed Non-Hermitian Hollow Nanowire Cavity for Generating Optical Orbital Angular Momentum
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | design emission wavelength | 445nm | — | |||
| Optical Performance | light extraction efficiency | 25.67% | — | |||
| Optical Performance | beam divergence angle | 5.7deg | — | |||
| Optical Field Intensity | main lobe intensity | 0.00752V/m | — |
Related documents with shared materials, methods, properties, or citations.
Inverse-Designed Non-Hermitian Hollow Nanowire Cavity for Generating Optical Orbital Angular Momentum
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | design emission wavelength | 445nm | — | |||
| Optical Performance | light extraction efficiency | 25.67% | — | |||
| Optical Performance | beam divergence angle | 5.7deg | — | |||
| Optical Field Intensity | main lobe intensity | 0.00752V/m | — |
Related documents with shared materials, methods, properties, or citations.
Inverse-Designed Non-Hermitian Hollow Nanowire Cavity for Generating Optical Orbital Angular Momentum
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | design emission wavelength | 445nm | — | |||
| Optical Performance | light extraction efficiency | 25.67% | — | |||
| Optical Performance | beam divergence angle | 5.7deg | — | |||
| Optical Field Intensity | main lobe intensity | 0.00752V/m | — |
Related documents with shared materials, methods, properties, or citations.
Inverse-Designed Non-Hermitian Hollow Nanowire Cavity for Generating Optical Orbital Angular Momentum
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces