Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Marta Brzezińska; Oleg V. Yazyev

doi:10.48550/arxiv.2305.09749

Paper details

Research paper

Computational DFTComputational Multiscale

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Marta Brzezińska, Oleg V. Yazyev

arXiv·2023·10.48550/arxiv.2305.09749·arXiv:2305.09749

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

1 property

Simulated Supercell DftCStudied Material

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

3 properties

Simulated Supercell DftCStudied MaterialBNStudied Material

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

5 properties

Simulated Supercell DftCStudied MaterialBNStudied Material

Materials

bilayer graphene

Studied Material

Also known as

AB-stacked bilayer grapheneBLG

Variables

stacking= AB

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	pristine BLG band gap	gapless	C	Pristine AB-stacked bilayer graphene reference system used i		—
Band Gap	indirect band gap	4.78eV	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	Pz/A	-1.026pC/m	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Band Gap	heterostructure band-gap range	<~1 to 62meV	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	heterostructure Pz/A range	~0.002 to 4.3pC/m	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Flat Band Separation Periodicity	superlattice periodicity threshold	30nm	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Xrd Lattice Constant A	lattice constant a	2.46Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	pristine BLG band gap	gapless	C	Pristine AB-stacked bilayer graphene reference system used i		—
Band Gap	indirect band gap	4.78eV	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	Pz/A	-1.026pC/m	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Band Gap	heterostructure band-gap range	<~1 to 62meV	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	heterostructure Pz/A range	~0.002 to 4.3pC/m	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Flat Band Separation Periodicity	superlattice periodicity threshold	30nm	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Xrd Lattice Constant A	lattice constant a	2.46Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	pristine BLG band gap	gapless	C	Pristine AB-stacked bilayer graphene reference system used i		—
Band Gap	indirect band gap	4.78eV	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	Pz/A	-1.026pC/m	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Band Gap	heterostructure band-gap range	<~1 to 62meV	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	heterostructure Pz/A range	~0.002 to 4.3pC/m	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Flat Band Separation Periodicity	superlattice periodicity threshold	30nm	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Xrd Lattice Constant A	lattice constant a	2.46Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Band Gap	pristine BLG band gap	gapless	C	Pristine AB-stacked bilayer graphene reference system used i		—
Band Gap	indirect band gap	4.78eV	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	Pz/A	-1.026pC/m	BN	Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Band Gap	heterostructure band-gap range	<~1 to 62meV	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Polarization Per Area	heterostructure Pz/A range	~0.002 to 4.3pC/m	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Flat Band Separation Periodicity	superlattice periodicity threshold	30nm	C BN	Representative non-centrosymmetric 2h-BN/BLG heterostructure Representative encapsulated 2h-BN/BLG/2h-BN heterostructure		—
Xrd Lattice Constant A	lattice constant a	2.46Å	—	—	—	—

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices

Samples

Pristine AB-stacked bilayer graphene reference system used in the DFT band-structure analysis.

Representative non-centrosymmetric 2h-BN/BLG heterostructure with bilayer graphene deposited on polar h-BN bilayers.

Representative encapsulated 2h-BN/BLG/2h-BN heterostructure used for the DFT and Wannier-based analysis.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations