Fundamental Efficiency Limits of Transition-Metal Dichalcogenide Solar Cells with Carrier Multiplication and Hot-Carrier Effects

Seungwoo Lee

doi:10.1063/1.2356314

Paper details

Research paper

TheoreticalComputed Raman

Fundamental Efficiency Limits of Transition-Metal Dichalcogenide Solar Cells with Carrier Multiplication and Hot-Carrier Effects

Seungwoo Lee

arXiv·2026·10.1063/1.2356314·arXiv:2605.00451

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Modeled monolayer WSe₂ absorber used as a representative TMD photovoltaic case study.

4 properties

SimulatedWSe₂Studied Material

Modeled MoS₂ absorber used as a representative TMD photovoltaic case study.

1 property

SimulatedMoS₂Studied Material

Modeled MoTe₂ absorber used as a representative TMD photovoltaic case study.

1 property

SimulatedMoTe₂Studied Material

Materials

WSe₂

Studied Material

studied material

MoS₂

Studied Material

studied material

MoTe₂

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Fundamental Efficiency Limits of Transition-Metal Dichalcogenide Solar Cells with Carrier Multiplication and Hot-Carrier Effects | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	Eg	1.63eV	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Optical Band Gap	SQ optimum Eg	1.3eV	MoS₂	Modeled MoS₂ absorber used as a representative TMD photovolt	—
Optical Band Gap	CM/HC-favored Eg envelope	1eV	MoTe₂	Modeled MoTe₂ absorber used as a representative TMD photovol	—
Fet On Off Ratio	reversible efficiency above 50%	50%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	above-gap AM1.5G photons satisfying E > 2Eg	3.7%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	idealized short-circuit current gain from carrier multiplication	0.6%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	Eg	1.63eV	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Optical Band Gap	SQ optimum Eg	1.3eV	MoS₂	Modeled MoS₂ absorber used as a representative TMD photovolt	—
Optical Band Gap	CM/HC-favored Eg envelope	1eV	MoTe₂	Modeled MoTe₂ absorber used as a representative TMD photovol	—
Fet On Off Ratio	reversible efficiency above 50%	50%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	above-gap AM1.5G photons satisfying E > 2Eg	3.7%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	idealized short-circuit current gain from carrier multiplication	0.6%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	Eg	1.63eV	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Optical Band Gap	SQ optimum Eg	1.3eV	MoS₂	Modeled MoS₂ absorber used as a representative TMD photovolt	—
Optical Band Gap	CM/HC-favored Eg envelope	1eV	MoTe₂	Modeled MoTe₂ absorber used as a representative TMD photovol	—
Fet On Off Ratio	reversible efficiency above 50%	50%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	above-gap AM1.5G photons satisfying E > 2Eg	3.7%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	idealized short-circuit current gain from carrier multiplication	0.6%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	Eg	1.63eV	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Optical Band Gap	SQ optimum Eg	1.3eV	MoS₂	Modeled MoS₂ absorber used as a representative TMD photovolt	—
Optical Band Gap	CM/HC-favored Eg envelope	1eV	MoTe₂	Modeled MoTe₂ absorber used as a representative TMD photovol	—
Fet On Off Ratio	reversible efficiency above 50%	50%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	above-gap AM1.5G photons satisfying E > 2Eg	3.7%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—
Fet On Off Ratio	idealized short-circuit current gain from carrier multiplication	0.6%	WSe₂	Modeled monolayer WSe₂ absorber used as a representative TMD	—