Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gated Bernal bilayer graphene modeled in the low-doping hole regime with a mini-valley-polarized one-pocket state derived from Hartree-Fock minimization and analyzed with Boltzmann transport.
No measurements recorded
SimulatedCStudied Material
Materials
Bernal bilayer graphene
C
Studied Material
Also known as
BLGbilayer graphene
Variables
stacking= Bernal
valley_structure= mini-valley polarized state
studied material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gated Bernal bilayer graphene modeled in the low-doping hole regime with a mini-valley-polarized one-pocket state derived from Hartree-Fock minimization and analyzed with Boltzmann transport.
No measurements recorded
SimulatedCStudied Material
Materials
Bernal bilayer graphene
C
Studied Material
Also known as
BLGbilayer graphene
Variables
stacking= Bernal
valley_structure= mini-valley polarized state
studied material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gated Bernal bilayer graphene modeled in the low-doping hole regime with a mini-valley-polarized one-pocket state derived from Hartree-Fock minimization and analyzed with Boltzmann transport.
No measurements recorded
SimulatedCStudied Material
Materials
Bernal bilayer graphene
C
Studied Material
Also known as
BLGbilayer graphene
Variables
stacking= Bernal
valley_structure= mini-valley polarized state
studied material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gated Bernal bilayer graphene modeled in the low-doping hole regime with a mini-valley-polarized one-pocket state derived from Hartree-Fock minimization and analyzed with Boltzmann transport.
No measurements recorded
SimulatedCStudied Material
Materials
Bernal bilayer graphene
C
Studied Material
Also known as
BLGbilayer graphene
Variables
stacking= Bernal
valley_structure= mini-valley polarized state
studied material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Hartree-Fock minimization of the total energy functional for gated Bernal bilayer graphene with long-range Coulomb interaction; evaluation of valley-polarized ground states and N-pocket states.
Settings
modelk·p Hamiltonian for Bernal bilayer graphene
interactionCoulomb
temperatureT = 0 limit
pocket states1-pocket, 2-pocket, 3-pocket
occupancy regimelow hole doping
projected flavor(↑, K)
displacement fieldlarge electric displacement field
dielectric constant5
Conditions
context:ground-state minimization
valley flipping relevance:establishes mini-valley polarized phase
Boltzmann-equation transport analysis of the mini-valley-polarized one-pocket state including intravalley and intervalley relaxation processes and current-driven valley flipping.
Hartree-Fock minimization of the total energy functional for gated Bernal bilayer graphene with long-range Coulomb interaction; evaluation of valley-polarized ground states and N-pocket states.
Settings
modelk·p Hamiltonian for Bernal bilayer graphene
interactionCoulomb
temperatureT = 0 limit
pocket states1-pocket, 2-pocket, 3-pocket
occupancy regimelow hole doping
projected flavor(↑, K)
displacement fieldlarge electric displacement field
dielectric constant5
Conditions
context:ground-state minimization
valley flipping relevance:establishes mini-valley polarized phase
Boltzmann-equation transport analysis of the mini-valley-polarized one-pocket state including intravalley and intervalley relaxation processes and current-driven valley flipping.
Hartree-Fock minimization of the total energy functional for gated Bernal bilayer graphene with long-range Coulomb interaction; evaluation of valley-polarized ground states and N-pocket states.
Settings
modelk·p Hamiltonian for Bernal bilayer graphene
interactionCoulomb
temperatureT = 0 limit
pocket states1-pocket, 2-pocket, 3-pocket
occupancy regimelow hole doping
projected flavor(↑, K)
displacement fieldlarge electric displacement field
dielectric constant5
Conditions
context:ground-state minimization
valley flipping relevance:establishes mini-valley polarized phase
Boltzmann-equation transport analysis of the mini-valley-polarized one-pocket state including intravalley and intervalley relaxation processes and current-driven valley flipping.
Hartree-Fock minimization of the total energy functional for gated Bernal bilayer graphene with long-range Coulomb interaction; evaluation of valley-polarized ground states and N-pocket states.
Settings
modelk·p Hamiltonian for Bernal bilayer graphene
interactionCoulomb
temperatureT = 0 limit
pocket states1-pocket, 2-pocket, 3-pocket
occupancy regimelow hole doping
projected flavor(↑, K)
displacement fieldlarge electric displacement field
dielectric constant5
Conditions
context:ground-state minimization
valley flipping relevance:establishes mini-valley polarized phase
Boltzmann-equation transport analysis of the mini-valley-polarized one-pocket state including intravalley and intervalley relaxation processes and current-driven valley flipping.
