Research paper
Experimental CharacterizationComputational MultiscaleExplore this record
Jump to sectionEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac voltage shift | concentration-dependent displacement of the Dirac voltage | — | |||
| Fet On Off Ratio | device response behavior | reversible and reproducible response under sub-volt operation | — | |||
| Fet Threshold Voltage | limit of detection | 0.0087mg/mL | — | |||
| Fet Threshold Voltage | linear dynamic range upper limit | 10mg/mL | — |
Related documents with shared materials, methods, properties, or citations.
Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions
Electrical tunability of terahertz nonlinearity in graphene
GRAPHENE PHOTONIC DEVICE
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Explore this record
Jump to sectionEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac voltage shift | concentration-dependent displacement of the Dirac voltage | — | |||
| Fet On Off Ratio | device response behavior | reversible and reproducible response under sub-volt operation | — | |||
| Fet Threshold Voltage | limit of detection | 0.0087mg/mL | — | |||
| Fet Threshold Voltage | linear dynamic range upper limit | 10mg/mL | — |
Related documents with shared materials, methods, properties, or citations.
Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions
Electrical tunability of terahertz nonlinearity in graphene
GRAPHENE PHOTONIC DEVICE
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Explore this record
Jump to sectionEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac voltage shift | concentration-dependent displacement of the Dirac voltage | — | |||
| Fet On Off Ratio | device response behavior | reversible and reproducible response under sub-volt operation | — | |||
| Fet Threshold Voltage | limit of detection | 0.0087mg/mL | — | |||
| Fet Threshold Voltage | linear dynamic range upper limit | 10mg/mL | — |
Related documents with shared materials, methods, properties, or citations.
Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions
Electrical tunability of terahertz nonlinearity in graphene
GRAPHENE PHOTONIC DEVICE
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Explore this record
Jump to sectionEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac voltage shift | concentration-dependent displacement of the Dirac voltage | — | |||
| Fet On Off Ratio | device response behavior | reversible and reproducible response under sub-volt operation | — | |||
| Fet Threshold Voltage | limit of detection | 0.0087mg/mL | — | |||
| Fet Threshold Voltage | linear dynamic range upper limit | 10mg/mL | — |
Related documents with shared materials, methods, properties, or citations.
Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions
Electrical tunability of terahertz nonlinearity in graphene
GRAPHENE PHOTONIC DEVICE
Room temperature nonlocal detection of charge-spin interconversion in a topological insulator