Research paperTheoreticalComputed RamanInterfacial Heat Transport via Evanescent Radiation by Hot ElectronsWilliam D. Hutchins, Saman Zare, Mehran Habibzadeh, Sheila Edalatpour et al.arXiv preprint·2025·10.1103/PhysRevLett.118.126804·arXiv:2504.05676AbstractWe predict an additional thermal transport pathway across metal/non-metal interfaces with large electron-phonon non-equilibrium via evanescent radiative heat transfer. In such systems, electron scattering processes vary drastically and can be leveraged to guide heat across interfaces via radiative heat transport without engaging the lattice directly. We employ the formalism of fluctuational electrodynamics to simulate the spectral radiative heat flux across the interface of a metal film and a non-metal substrate. We find that the radiative conductance can exceed 300 MW m−2 K⁻¹ at an electron temperature of 5000 K for an emitting tungsten film on a hexagonal boron nitride substrate, becoming comparable to its conductive counterpart.Read more
Simulated 10 nm tungsten film on hexagonal boron nitride substrate under strong electron-phonon non-equilibrium.2 propertiesWStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm gold film on hexagonal boron nitride substrate used as a representative emitting-metal system.1 propertyAuStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm copper film on hexagonal boron nitride substrate used for comparison of electron-scattering and radiative transport trends.1 propertyCuStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalComputed RamanInterfacial Heat Transport via Evanescent Radiation by Hot ElectronsWilliam D. Hutchins, Saman Zare, Mehran Habibzadeh, Sheila Edalatpour et al.arXiv preprint·2025·10.1103/PhysRevLett.118.126804·arXiv:2504.05676AbstractWe predict an additional thermal transport pathway across metal/non-metal interfaces with large electron-phonon non-equilibrium via evanescent radiative heat transfer. In such systems, electron scattering processes vary drastically and can be leveraged to guide heat across interfaces via radiative heat transport without engaging the lattice directly. We employ the formalism of fluctuational electrodynamics to simulate the spectral radiative heat flux across the interface of a metal film and a non-metal substrate. We find that the radiative conductance can exceed 300 MW m−2 K⁻¹ at an electron temperature of 5000 K for an emitting tungsten film on a hexagonal boron nitride substrate, becoming comparable to its conductive counterpart.Read more
Simulated 10 nm tungsten film on hexagonal boron nitride substrate under strong electron-phonon non-equilibrium.2 propertiesWStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm gold film on hexagonal boron nitride substrate used as a representative emitting-metal system.1 propertyAuStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm copper film on hexagonal boron nitride substrate used for comparison of electron-scattering and radiative transport trends.1 propertyCuStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalComputed RamanInterfacial Heat Transport via Evanescent Radiation by Hot ElectronsWilliam D. Hutchins, Saman Zare, Mehran Habibzadeh, Sheila Edalatpour et al.arXiv preprint·2025·10.1103/PhysRevLett.118.126804·arXiv:2504.05676AbstractWe predict an additional thermal transport pathway across metal/non-metal interfaces with large electron-phonon non-equilibrium via evanescent radiative heat transfer. In such systems, electron scattering processes vary drastically and can be leveraged to guide heat across interfaces via radiative heat transport without engaging the lattice directly. We employ the formalism of fluctuational electrodynamics to simulate the spectral radiative heat flux across the interface of a metal film and a non-metal substrate. We find that the radiative conductance can exceed 300 MW m−2 K⁻¹ at an electron temperature of 5000 K for an emitting tungsten film on a hexagonal boron nitride substrate, becoming comparable to its conductive counterpart.Read more
Simulated 10 nm tungsten film on hexagonal boron nitride substrate under strong electron-phonon non-equilibrium.2 propertiesWStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm gold film on hexagonal boron nitride substrate used as a representative emitting-metal system.1 propertyAuStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm copper film on hexagonal boron nitride substrate used for comparison of electron-scattering and radiative transport trends.1 propertyCuStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalComputed RamanInterfacial Heat Transport via Evanescent Radiation by Hot ElectronsWilliam D. Hutchins, Saman Zare, Mehran Habibzadeh, Sheila Edalatpour et al.arXiv preprint·2025·10.1103/PhysRevLett.118.126804·arXiv:2504.05676AbstractWe predict an additional thermal transport pathway across metal/non-metal interfaces with large electron-phonon non-equilibrium via evanescent radiative heat transfer. In such systems, electron scattering processes vary drastically and can be leveraged to guide heat across interfaces via radiative heat transport without engaging the lattice directly. We employ the formalism of fluctuational electrodynamics to simulate the spectral radiative heat flux across the interface of a metal film and a non-metal substrate. We find that the radiative conductance can exceed 300 MW m−2 K⁻¹ at an electron temperature of 5000 K for an emitting tungsten film on a hexagonal boron nitride substrate, becoming comparable to its conductive counterpart.Read more
Simulated 10 nm tungsten film on hexagonal boron nitride substrate under strong electron-phonon non-equilibrium.2 propertiesWStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm gold film on hexagonal boron nitride substrate used as a representative emitting-metal system.1 propertyAuStudied MaterialhBNSubstrate / DielectricExpand
Simulated 10 nm copper film on hexagonal boron nitride substrate used for comparison of electron-scattering and radiative transport trends.1 propertyCuStudied MaterialhBNSubstrate / DielectricExpand