Patent
US 9,126,829GRAPHENE VALLEY SINGLET-TRIPLET QUBIT DEVICE AND THE METHOD OF THE SAME
Yu-Shu WU
US
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Atlas literature
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US 9,126,829Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
App l. No.: 13/350,135 Am dt. Dated: Reply to Office Action of: AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions of claims in the application: LISTING OF CLAIMS 1. A graphene valley singlet-triplet qubit device with double quantum dots, comprising: a substrate; a bulk graphene layer formed on said substrate, wherein an energy gap is created between the valence band and the conduction band of said bulk graphene layer; and two top gates configured above and one back gate configured below said bulk graphene layer and biased to provide quantum confinement of electrons to form two quantum dots, a vertical electrical gate located between said two top gates used to tune a barrier height between said two quantum dots, and two side electrical gates located by said two quantum dots and biased to tune difference of two orbital magnetic moments of electrons in said two quantum dots respectively, wherein said bulk graphene layer is located in a magnetic field and a plurality of voltages are applied to said two top gates, said back gate, said vertical electrical gate and said two side electrical gates, thereby creating a valley singlet/triplet qubit; wherein said two quantum dots are made on said bulk graphene layer, and confined by said vertical electrical gate and said two side electrical gates and said two top gates; wherein electrons of said bulk graphene layer belong to two degenerate and inequivalent energy valleys, and the valley degree of freedom is utilized to encode a quantum information; wherein logic 0/1 states are represented by said valley singlet/triplet qubit, respectively.
The device in claim 1, wherein material of said substrate comprises SiC or BN.
The device in claim 1, wherein said magnetic field comprises a first magnetic field component normal to said bulk graphene layer, and a second magnetic field component parallel to said bulk graphene layer.
. canceled
The device in claim [[3]] 1, wherein said two-side electrical gates are applied to create DC or AC electric fields.
The device in claim [[3]] 1, wherein said vertical electrical gate comprises either a single vertical gate or a pair of split gates.
A method for manipulating a graphene valley singlet-triplet qubit device, comprising: applying at least one first vertical electrical gate voltage, a second vertical gate voltage and at least one side gate voltage to a graphene layer, wherein said graphene layer is located in a magnetic field, wherein two quantum dots are created by electrostatic modulation of energy bands in the space of said graphene layer by said at least one first vertical electrical gate, thereby creating a valley singlet-triplet qubit representing logic 0/1 states; and applying said at least one side gate voltage to said two quantum dots or adjusting said at least one first vertical gate voltage to control the magnetic moment difference between separately confined electrons in said two quantum dots, and adjusting said at least one first vertical gate voltage or said second vertical electrical gate for controlling the exchange interaction between separately confined electrons in said two quantum dots. withdrawn
The method in claim 8, wherein said qubit is manipulated to a pre-determined qubit state by utilizing said at least one vertical gate voltage and said at least one side gate voltage. withdrawn
The method in claim 8, wherein said at least one vertical gate voltage is applied on said graphene layer, and said at least one side gate voltage is applied to two sides of said quantum dots. withdrawn
The method in claim 8, wherein said magnetic field comprises a first magnetic field component normal to said graphene plane, and a second magnetic field component parallel to said graphene plane. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene valley singlet-triplet qubit device with double quantum dots
Materials described outside the worked examples.
bulk graphene
SiC
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,126,829Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
App l. No.: 13/350,135 Am dt. Dated: Reply to Office Action of: AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions of claims in the application: LISTING OF CLAIMS 1. A graphene valley singlet-triplet qubit device with double quantum dots, comprising: a substrate; a bulk graphene layer formed on said substrate, wherein an energy gap is created between the valence band and the conduction band of said bulk graphene layer; and two top gates configured above and one back gate configured below said bulk graphene layer and biased to provide quantum confinement of electrons to form two quantum dots, a vertical electrical gate located between said two top gates used to tune a barrier height between said two quantum dots, and two side electrical gates located by said two quantum dots and biased to tune difference of two orbital magnetic moments of electrons in said two quantum dots respectively, wherein said bulk graphene layer is located in a magnetic field and a plurality of voltages are applied to said two top gates, said back gate, said vertical electrical gate and said two side electrical gates, thereby creating a valley singlet/triplet qubit; wherein said two quantum dots are made on said bulk graphene layer, and confined by said vertical electrical gate and said two side electrical gates and said two top gates; wherein electrons of said bulk graphene layer belong to two degenerate and inequivalent energy valleys, and the valley degree of freedom is utilized to encode a quantum information; wherein logic 0/1 states are represented by said valley singlet/triplet qubit, respectively.
The device in claim 1, wherein material of said substrate comprises SiC or BN.
The device in claim 1, wherein said magnetic field comprises a first magnetic field component normal to said bulk graphene layer, and a second magnetic field component parallel to said bulk graphene layer.
. canceled
The device in claim [[3]] 1, wherein said two-side electrical gates are applied to create DC or AC electric fields.
The device in claim [[3]] 1, wherein said vertical electrical gate comprises either a single vertical gate or a pair of split gates.
A method for manipulating a graphene valley singlet-triplet qubit device, comprising: applying at least one first vertical electrical gate voltage, a second vertical gate voltage and at least one side gate voltage to a graphene layer, wherein said graphene layer is located in a magnetic field, wherein two quantum dots are created by electrostatic modulation of energy bands in the space of said graphene layer by said at least one first vertical electrical gate, thereby creating a valley singlet-triplet qubit representing logic 0/1 states; and applying said at least one side gate voltage to said two quantum dots or adjusting said at least one first vertical gate voltage to control the magnetic moment difference between separately confined electrons in said two quantum dots, and adjusting said at least one first vertical gate voltage or said second vertical electrical gate for controlling the exchange interaction between separately confined electrons in said two quantum dots. withdrawn
The method in claim 8, wherein said qubit is manipulated to a pre-determined qubit state by utilizing said at least one vertical gate voltage and said at least one side gate voltage. withdrawn
The method in claim 8, wherein said at least one vertical gate voltage is applied on said graphene layer, and said at least one side gate voltage is applied to two sides of said quantum dots. withdrawn
The method in claim 8, wherein said magnetic field comprises a first magnetic field component normal to said graphene plane, and a second magnetic field component parallel to said graphene plane. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene valley singlet-triplet qubit device with double quantum dots
Materials described outside the worked examples.
bulk graphene
SiC
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,126,829Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
App l. No.: 13/350,135 Am dt. Dated: Reply to Office Action of: AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions of claims in the application: LISTING OF CLAIMS 1. A graphene valley singlet-triplet qubit device with double quantum dots, comprising: a substrate; a bulk graphene layer formed on said substrate, wherein an energy gap is created between the valence band and the conduction band of said bulk graphene layer; and two top gates configured above and one back gate configured below said bulk graphene layer and biased to provide quantum confinement of electrons to form two quantum dots, a vertical electrical gate located between said two top gates used to tune a barrier height between said two quantum dots, and two side electrical gates located by said two quantum dots and biased to tune difference of two orbital magnetic moments of electrons in said two quantum dots respectively, wherein said bulk graphene layer is located in a magnetic field and a plurality of voltages are applied to said two top gates, said back gate, said vertical electrical gate and said two side electrical gates, thereby creating a valley singlet/triplet qubit; wherein said two quantum dots are made on said bulk graphene layer, and confined by said vertical electrical gate and said two side electrical gates and said two top gates; wherein electrons of said bulk graphene layer belong to two degenerate and inequivalent energy valleys, and the valley degree of freedom is utilized to encode a quantum information; wherein logic 0/1 states are represented by said valley singlet/triplet qubit, respectively.
The device in claim 1, wherein material of said substrate comprises SiC or BN.
The device in claim 1, wherein said magnetic field comprises a first magnetic field component normal to said bulk graphene layer, and a second magnetic field component parallel to said bulk graphene layer.
. canceled
The device in claim [[3]] 1, wherein said two-side electrical gates are applied to create DC or AC electric fields.
The device in claim [[3]] 1, wherein said vertical electrical gate comprises either a single vertical gate or a pair of split gates.
A method for manipulating a graphene valley singlet-triplet qubit device, comprising: applying at least one first vertical electrical gate voltage, a second vertical gate voltage and at least one side gate voltage to a graphene layer, wherein said graphene layer is located in a magnetic field, wherein two quantum dots are created by electrostatic modulation of energy bands in the space of said graphene layer by said at least one first vertical electrical gate, thereby creating a valley singlet-triplet qubit representing logic 0/1 states; and applying said at least one side gate voltage to said two quantum dots or adjusting said at least one first vertical gate voltage to control the magnetic moment difference between separately confined electrons in said two quantum dots, and adjusting said at least one first vertical gate voltage or said second vertical electrical gate for controlling the exchange interaction between separately confined electrons in said two quantum dots. withdrawn
The method in claim 8, wherein said qubit is manipulated to a pre-determined qubit state by utilizing said at least one vertical gate voltage and said at least one side gate voltage. withdrawn
The method in claim 8, wherein said at least one vertical gate voltage is applied on said graphene layer, and said at least one side gate voltage is applied to two sides of said quantum dots. withdrawn
The method in claim 8, wherein said magnetic field comprises a first magnetic field component normal to said graphene plane, and a second magnetic field component parallel to said graphene plane. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene valley singlet-triplet qubit device with double quantum dots
Materials described outside the worked examples.
bulk graphene
SiC
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,126,829Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
App l. No.: 13/350,135 Am dt. Dated: Reply to Office Action of: AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions of claims in the application: LISTING OF CLAIMS 1. A graphene valley singlet-triplet qubit device with double quantum dots, comprising: a substrate; a bulk graphene layer formed on said substrate, wherein an energy gap is created between the valence band and the conduction band of said bulk graphene layer; and two top gates configured above and one back gate configured below said bulk graphene layer and biased to provide quantum confinement of electrons to form two quantum dots, a vertical electrical gate located between said two top gates used to tune a barrier height between said two quantum dots, and two side electrical gates located by said two quantum dots and biased to tune difference of two orbital magnetic moments of electrons in said two quantum dots respectively, wherein said bulk graphene layer is located in a magnetic field and a plurality of voltages are applied to said two top gates, said back gate, said vertical electrical gate and said two side electrical gates, thereby creating a valley singlet/triplet qubit; wherein said two quantum dots are made on said bulk graphene layer, and confined by said vertical electrical gate and said two side electrical gates and said two top gates; wherein electrons of said bulk graphene layer belong to two degenerate and inequivalent energy valleys, and the valley degree of freedom is utilized to encode a quantum information; wherein logic 0/1 states are represented by said valley singlet/triplet qubit, respectively.
The device in claim 1, wherein material of said substrate comprises SiC or BN.
The device in claim 1, wherein said magnetic field comprises a first magnetic field component normal to said bulk graphene layer, and a second magnetic field component parallel to said bulk graphene layer.
. canceled
The device in claim [[3]] 1, wherein said two-side electrical gates are applied to create DC or AC electric fields.
The device in claim [[3]] 1, wherein said vertical electrical gate comprises either a single vertical gate or a pair of split gates.
A method for manipulating a graphene valley singlet-triplet qubit device, comprising: applying at least one first vertical electrical gate voltage, a second vertical gate voltage and at least one side gate voltage to a graphene layer, wherein said graphene layer is located in a magnetic field, wherein two quantum dots are created by electrostatic modulation of energy bands in the space of said graphene layer by said at least one first vertical electrical gate, thereby creating a valley singlet-triplet qubit representing logic 0/1 states; and applying said at least one side gate voltage to said two quantum dots or adjusting said at least one first vertical gate voltage to control the magnetic moment difference between separately confined electrons in said two quantum dots, and adjusting said at least one first vertical gate voltage or said second vertical electrical gate for controlling the exchange interaction between separately confined electrons in said two quantum dots. withdrawn
The method in claim 8, wherein said qubit is manipulated to a pre-determined qubit state by utilizing said at least one vertical gate voltage and said at least one side gate voltage. withdrawn
The method in claim 8, wherein said at least one vertical gate voltage is applied on said graphene layer, and said at least one side gate voltage is applied to two sides of said quantum dots. withdrawn
The method in claim 8, wherein said magnetic field comprises a first magnetic field component normal to said graphene plane, and a second magnetic field component parallel to said graphene plane. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene valley singlet-triplet qubit device with double quantum dots
Materials described outside the worked examples.
bulk graphene
SiC
Related documents with shared materials, methods, properties, or citations.