Research paperExperimental CharacterizationIntrinsic spin Hall torque in a moiré Chern magnetC. L. Tschirhart, Evgeny Redekop, Lizhong Li, Tingxin Li et al.arXiv·2022·10.1126/science.abd3190·arXiv:2205.02823AbstractWe demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe₂/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moiré superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe₂/WSe₂ and other moiré materials.Read more
AB-stacked MoTe₂ bilayer/WSe₂ monolayer moiré device with graphite top and bottom gates used for current switching and nanoSQUID magnetometry.1 characterization5 properties3 figuresExperimentalAB-stacked 2L-MoTe₂/WSe₂ heterostructureStudied MaterialMoTe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactExpand
Research paperExperimental CharacterizationIntrinsic spin Hall torque in a moiré Chern magnetC. L. Tschirhart, Evgeny Redekop, Lizhong Li, Tingxin Li et al.arXiv·2022·10.1126/science.abd3190·arXiv:2205.02823AbstractWe demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe₂/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moiré superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe₂/WSe₂ and other moiré materials.Read more
AB-stacked MoTe₂ bilayer/WSe₂ monolayer moiré device with graphite top and bottom gates used for current switching and nanoSQUID magnetometry.1 characterization5 properties3 figuresExperimentalAB-stacked 2L-MoTe₂/WSe₂ heterostructureStudied MaterialMoTe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactExpand
Research paperExperimental CharacterizationIntrinsic spin Hall torque in a moiré Chern magnetC. L. Tschirhart, Evgeny Redekop, Lizhong Li, Tingxin Li et al.arXiv·2022·10.1126/science.abd3190·arXiv:2205.02823AbstractWe demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe₂/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moiré superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe₂/WSe₂ and other moiré materials.Read more
AB-stacked MoTe₂ bilayer/WSe₂ monolayer moiré device with graphite top and bottom gates used for current switching and nanoSQUID magnetometry.1 characterization5 properties3 figuresExperimentalAB-stacked 2L-MoTe₂/WSe₂ heterostructureStudied MaterialMoTe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactExpand
Research paperExperimental CharacterizationIntrinsic spin Hall torque in a moiré Chern magnetC. L. Tschirhart, Evgeny Redekop, Lizhong Li, Tingxin Li et al.arXiv·2022·10.1126/science.abd3190·arXiv:2205.02823AbstractWe demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe₂/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moiré superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe₂/WSe₂ and other moiré materials.Read more
AB-stacked MoTe₂ bilayer/WSe₂ monolayer moiré device with graphite top and bottom gates used for current switching and nanoSQUID magnetometry.1 characterization5 properties3 figuresExperimentalAB-stacked 2L-MoTe₂/WSe₂ heterostructureStudied MaterialMoTe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactExpand