Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

W. Jaskólski

doi:10.3390/ma17081915

Paper details

Research paper

TheoreticalComputed Phonon

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

W. Jaskólski

arXiv preprint·2024·10.3390/ma17081915·arXiv:2403.11143

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

1 property

CStudied Material

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

No measurements recorded

CStudied Material

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

4 properties

CStudied Material

Materials

graphene

Studied Material

Also known as

multilayer graphene

studied material

Properties

Type	Label	Value	Material	Sample	Source
Critical Gate Voltage	BLG domain-wall metallic behavior restored	0.025eV	C	Simulated Bernal-stacked bilayer graphene with an armchair-d	—
Critical Gate Voltage	FLG flat-band condition	0.092eV	C	Simulated four-layer graphene with an armchair-direction sta	—
Band Width	flat band width	5meV	C	Simulated four-layer graphene with an armchair-direction sta	—
Critical Gate Voltage	FLG gap-closing condition	0.075eV	C	Simulated four-layer graphene with an armchair-direction sta	—
Critical Gate Voltage	FLG re-entrant metallicity threshold	0.3eV	C	Simulated four-layer graphene with an armchair-direction sta	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene | Matter42 Literature

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Samples

Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.

Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.

Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.

Materials

Properties

Why these are connected

Simulations

Simulations

Simulations

Simulations