Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Ciaran Mullan; Sergey Slizovskiy; Jun Yin; Ziwei Wang; Qian Yang; Shuigang Xu; Yaping Yang; Benjamin A. Piot; Sheng Hu; Takashi Taniguchi; Kenji Watanabe; Kostya S. Novoselov; A. K. Geim; Vladimir I. Fal’ko; Artem Mishchenko

doi:10.1038/s41586-023-06264-5

Paper details

Research paper

Experimental CharacterizationTheoretical

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Ciaran Mullan, Sergey Slizovskiy, Jun Yin, Ziwei Wang et al.

2022·10.1038/s41586-023-06264-5·arXiv:2211.16420

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

1 characterization1 property3 figures

ExperimentalCStudied MaterialhBNStudied Material

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

1 characterization5 properties3 figures

ExperimentalCStudied MaterialhBNStudied Material

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

1 characterization5 properties3 figures

ExperimentalCStudied MaterialhBNStudied Material

Device D4: non-aligned graphite-hBN interface device used as a control.

1 characterization3 figures

ExperimentalCStudied MaterialhBNStudied Material

Materials

graphite

Studied Material

Also known as

Grt

studied material

hexagonal boron nitride

hBN

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	graphite channel thickness	8.2nm	C	Device D1: Hall bar geometry, 8.2-nm-thick graphite channel,		—
Film Thickness	graphite channel thickness	7nm	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Film Thickness	graphite channel thickness	5nm	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Lattice Mismatch	graphite/hBN lattice mismatch	1.8%	C hBN	—	—	—
Phase Coherence Length Lower Bound	phase coherence length	85nm	C hBN	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Splitting Rate	delta₁0	0.4meV/T	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	largest fractal QHE gap	0.1meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	QHE gap range	30 μeV to 1.8 meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Scaling Factor	S	0.14meV	C hBN	—		—
Carrier Density	nt	3.11e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Carrier Density	nb	3.31e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	graphite channel thickness	8.2nm	C	Device D1: Hall bar geometry, 8.2-nm-thick graphite channel,		—
Film Thickness	graphite channel thickness	7nm	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Film Thickness	graphite channel thickness	5nm	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Lattice Mismatch	graphite/hBN lattice mismatch	1.8%	C hBN	—	—	—
Phase Coherence Length Lower Bound	phase coherence length	85nm	C hBN	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Splitting Rate	delta₁0	0.4meV/T	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	largest fractal QHE gap	0.1meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	QHE gap range	30 μeV to 1.8 meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Scaling Factor	S	0.14meV	C hBN	—		—
Carrier Density	nt	3.11e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Carrier Density	nb	3.31e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	graphite channel thickness	8.2nm	C	Device D1: Hall bar geometry, 8.2-nm-thick graphite channel,		—
Film Thickness	graphite channel thickness	7nm	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Film Thickness	graphite channel thickness	5nm	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Lattice Mismatch	graphite/hBN lattice mismatch	1.8%	C hBN	—	—	—
Phase Coherence Length Lower Bound	phase coherence length	85nm	C hBN	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Splitting Rate	delta₁0	0.4meV/T	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	largest fractal QHE gap	0.1meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	QHE gap range	30 μeV to 1.8 meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Scaling Factor	S	0.14meV	C hBN	—		—
Carrier Density	nt	3.11e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Carrier Density	nb	3.31e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	graphite channel thickness	8.2nm	C	Device D1: Hall bar geometry, 8.2-nm-thick graphite channel,		—
Film Thickness	graphite channel thickness	7nm	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Film Thickness	graphite channel thickness	5nm	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Lattice Mismatch	graphite/hBN lattice mismatch	1.8%	C hBN	—	—	—
Phase Coherence Length Lower Bound	phase coherence length	85nm	C hBN	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Splitting Rate	delta₁0	0.4meV/T	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	largest fractal QHE gap	0.1meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Gap Size	QHE gap range	30 μeV to 1.8 meV	C	Device D3: Corbino geometry, 5-nm-thick graphite channel, bo		—
Energy Scaling Factor	S	0.14meV	C hBN	—		—
Carrier Density	nt	3.11e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—
Carrier Density	nb	3.31e12 cm⁻²	C	Device D2: Corbino geometry, 7-nm-thick graphite channel; on		—

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Samples

Device D1: Hall bar geometry, 8.2-nm-thick graphite channel, bottom hBN aligned to graphite.

Device D2: Corbino geometry, 7-nm-thick graphite channel; one interface aligned and the other non-aligned, with top gate tuning the aligned graphite-hBN interface and bottom gate tuning the non-aligned interface.

Device D3: Corbino geometry, 5-nm-thick graphite channel, both top and bottom hBN flakes aligned to graphite.

Device D4: non-aligned graphite-hBN interface device used as a control.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations