Research paper
Computational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties1 figure
1 characterization3 properties1 figure
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | MoSe₂ band gap | 2.21eV | — | |||
| Optical Band Gap | Pt-MoSe₂ band gap | 0eV | — | |||
| Xrd Space Group | MoSe₂ space group | P-6m2 | — | |||
| Xrd Lattice Constant A | MoSe₂ lattice constant a | 3.234angstrom | — | |||
| Xrd Lattice Constant A | Pt-MoSe₂ lattice constant a | 6.738angstrom | — | |||
| Xrd Space Group | Pt-MoSe₂ space group | P1 | — |
Related documents with shared materials, methods, properties, or citations.
Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2
Two-gap superconductivity in a Janus MoSeLi monolayer
Symmetries of Excitons
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron–Hole Recombination for Solar Water Splitting
Low-energy moiré phonons in twisted bilayer van der Waals heterostructures
Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2
Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties1 figure
1 characterization3 properties1 figure
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | MoSe₂ band gap | 2.21eV | — | |||
| Optical Band Gap | Pt-MoSe₂ band gap | 0eV | — | |||
| Xrd Space Group | MoSe₂ space group | P-6m2 | — | |||
| Xrd Lattice Constant A | MoSe₂ lattice constant a | 3.234angstrom | — | |||
| Xrd Lattice Constant A | Pt-MoSe₂ lattice constant a | 6.738angstrom | — | |||
| Xrd Space Group | Pt-MoSe₂ space group | P1 | — |
Related documents with shared materials, methods, properties, or citations.
Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2
Two-gap superconductivity in a Janus MoSeLi monolayer
Symmetries of Excitons
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron–Hole Recombination for Solar Water Splitting
Low-energy moiré phonons in twisted bilayer van der Waals heterostructures
Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2
Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties1 figure
1 characterization3 properties1 figure
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | MoSe₂ band gap | 2.21eV | — | |||
| Optical Band Gap | Pt-MoSe₂ band gap | 0eV | — | |||
| Xrd Space Group | MoSe₂ space group | P-6m2 | — | |||
| Xrd Lattice Constant A | MoSe₂ lattice constant a | 3.234angstrom | — | |||
| Xrd Lattice Constant A | Pt-MoSe₂ lattice constant a | 6.738angstrom | — | |||
| Xrd Space Group | Pt-MoSe₂ space group | P1 | — |
Related documents with shared materials, methods, properties, or citations.
Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2
Two-gap superconductivity in a Janus MoSeLi monolayer
Symmetries of Excitons
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron–Hole Recombination for Solar Water Splitting
Low-energy moiré phonons in twisted bilayer van der Waals heterostructures
Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2
Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties1 figure
1 characterization3 properties1 figure
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | MoSe₂ band gap | 2.21eV | — | |||
| Optical Band Gap | Pt-MoSe₂ band gap | 0eV | — | |||
| Xrd Space Group | MoSe₂ space group | P-6m2 | — | |||
| Xrd Lattice Constant A | MoSe₂ lattice constant a | 3.234angstrom | — | |||
| Xrd Lattice Constant A | Pt-MoSe₂ lattice constant a | 6.738angstrom | — | |||
| Xrd Space Group | Pt-MoSe₂ space group | P1 | — |
Related documents with shared materials, methods, properties, or citations.
Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2
Two-gap superconductivity in a Janus MoSeLi monolayer
Symmetries of Excitons
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron–Hole Recombination for Solar Water Splitting
Low-energy moiré phonons in twisted bilayer van der Waals heterostructures
Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2
Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential