Research paperExperimental GrowthExperimental CharacterizationNitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitrideKento Sasaki, Takashi Taniguchi, Kensuke KobayashiarXiv·2023·10.48550/ARXIV.2306.15960·arXiv:2307.04476AbstractWe investigate nitrogen isotope effects on boron vacancy (VB) defects in 15N isotopically enriched hBN synthesized using a metathesis reaction. Raman shifts scale with reduced mass, consistent with previous work on boron isotope enrichment. Optically detected magnetic resonance (ODMR) spectra of VB defects created by helium ion implantation show nitrogen isotope-dependent splitting, and the hyperfine interaction parameter of 15N spin is determined to be 64 MHz.Read more
14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.3 preparations2 characterizations1 property2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitrideKento Sasaki, Takashi Taniguchi, Kensuke KobayashiarXiv·2023·10.48550/ARXIV.2306.15960·arXiv:2307.04476AbstractWe investigate nitrogen isotope effects on boron vacancy (VB) defects in 15N isotopically enriched hBN synthesized using a metathesis reaction. Raman shifts scale with reduced mass, consistent with previous work on boron isotope enrichment. Optically detected magnetic resonance (ODMR) spectra of VB defects created by helium ion implantation show nitrogen isotope-dependent splitting, and the hyperfine interaction parameter of 15N spin is determined to be 64 MHz.Read more
14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.3 preparations2 characterizations1 property2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitrideKento Sasaki, Takashi Taniguchi, Kensuke KobayashiarXiv·2023·10.48550/ARXIV.2306.15960·arXiv:2307.04476AbstractWe investigate nitrogen isotope effects on boron vacancy (VB) defects in 15N isotopically enriched hBN synthesized using a metathesis reaction. Raman shifts scale with reduced mass, consistent with previous work on boron isotope enrichment. Optically detected magnetic resonance (ODMR) spectra of VB defects created by helium ion implantation show nitrogen isotope-dependent splitting, and the hyperfine interaction parameter of 15N spin is determined to be 64 MHz.Read more
14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.3 preparations2 characterizations1 property2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitrideKento Sasaki, Takashi Taniguchi, Kensuke KobayashiarXiv·2023·10.48550/ARXIV.2306.15960·arXiv:2307.04476AbstractWe investigate nitrogen isotope effects on boron vacancy (VB) defects in 15N isotopically enriched hBN synthesized using a metathesis reaction. Raman shifts scale with reduced mass, consistent with previous work on boron isotope enrichment. Optically detected magnetic resonance (ODMR) spectra of VB defects created by helium ion implantation show nitrogen isotope-dependent splitting, and the hyperfine interaction parameter of 15N spin is determined to be 64 MHz.Read more
14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.3 preparations3 characterizations5 properties2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.3 preparations2 characterizations1 property2 figuresExperimentalhBNStudied MaterialSi/SiO₂Substrate / DielectricExpand
