Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Kento Sasaki; Takashi Taniguchi; Kensuke Kobayashi

doi:10.48550/ARXIV.2306.15960

Paper details

Research paper

Experimental GrowthExperimental Characterization

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Kento Sasaki, Takashi Taniguchi, Kensuke Kobayashi

arXiv·2023·10.48550/ARXIV.2306.15960·arXiv:2307.04476

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

3 preparations3 characterizations5 properties2 figures

ExperimentalhBNStudied MaterialSi/SiO₂Substrate / Dielectric

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

3 preparations3 characterizations5 properties2 figures

ExperimentalhBNStudied MaterialSi/SiO₂Substrate / Dielectric

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

3 preparations2 characterizations1 property2 figures

ExperimentalhBNStudied MaterialSi/SiO₂Substrate / Dielectric

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hB₁₄NhB₁₄+15NhB₁₅NhBN

Variables

isotopic_composition

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	hB₁₄N Raman shift	1366.3cm⁻¹	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₄+15N Raman shift	1354.8cm⁻¹	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₅N Raman shift	1346.6cm⁻¹	hBN	Mixed 14N/15N hBN flake used for Raman measurement; VB defec	—
Fet Threshold Voltage	\|Azz\| of 14N	43MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Fet Threshold Voltage	\|Azz\| of 15N	64MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2312MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	5.6%	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	47MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2308MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	11%	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	51MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	hB₁₄N Raman shift	1366.3cm⁻¹	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₄+15N Raman shift	1354.8cm⁻¹	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₅N Raman shift	1346.6cm⁻¹	hBN	Mixed 14N/15N hBN flake used for Raman measurement; VB defec	—
Fet Threshold Voltage	\|Azz\| of 14N	43MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Fet Threshold Voltage	\|Azz\| of 15N	64MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2312MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	5.6%	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	47MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2308MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	11%	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	51MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	hB₁₄N Raman shift	1366.3cm⁻¹	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₄+15N Raman shift	1354.8cm⁻¹	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₅N Raman shift	1346.6cm⁻¹	hBN	Mixed 14N/15N hBN flake used for Raman measurement; VB defec	—
Fet Threshold Voltage	\|Azz\| of 14N	43MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Fet Threshold Voltage	\|Azz\| of 15N	64MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2312MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	5.6%	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	47MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2308MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	11%	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	51MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	hB₁₄N Raman shift	1366.3cm⁻¹	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₄+15N Raman shift	1354.8cm⁻¹	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Raman Peak	hB₁₅N Raman shift	1346.6cm⁻¹	hBN	Mixed 14N/15N hBN flake used for Raman measurement; VB defec	—
Fet Threshold Voltage	\|Azz\| of 14N	43MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Fet Threshold Voltage	\|Azz\| of 15N	64MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2312MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	5.6%	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	47MHz	hBN	14N-dominant hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	f-,0	2308MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	C	11%	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—
Transport Fitted Parameter	dν	51MHz	hBN	15N-enriched hBN flake used for Raman and ODMR measurements;	—

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Samples

14N-dominant hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

15N-enriched hBN flake used for Raman and ODMR measurements; VB defects were created by helium ion implantation.

Mixed 14N/15N hBN flake used for Raman measurement; VB defects created by helium ion implantation.

Materials

Why these are connected

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