Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Z. Mu; Z. Zhang; J. Fraunié; C. Robert; G. Seine; B. Gil; G. Cassabois; V. Jacques

doi:10.48550/arxiv.2509.18745

Paper details

Research paper

Experimental Characterization

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Z. Mu, Z. Zhang, J. Fraunié, C. Robert et al.

2026·10.48550/arxiv.2509.18745·arXiv:2509.18745

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

4 preparations3 characterizations3 properties3 figures

ExperimentalhBNStudied MaterialV_B^-Studied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

boron-vacancy color center

V_B^-

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Spin defects in hexagonal boron nitride as two-dimensional strain sensors | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak Shift	E2g strain coefficient	-24.7 ± 2.4cm⁻¹/%	hBN	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	Dε	3.4GHz	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	g1	-245 ± 10MHz/%	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak Shift	E2g strain coefficient	-24.7 ± 2.4cm⁻¹/%	hBN	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	Dε	3.4GHz	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	g1	-245 ± 10MHz/%	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak Shift	E2g strain coefficient	-24.7 ± 2.4cm⁻¹/%	hBN	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	Dε	3.4GHz	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	g1	-245 ± 10MHz/%	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak Shift	E2g strain coefficient	-24.7 ± 2.4cm⁻¹/%	hBN	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	Dε	3.4GHz	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—
Fet Threshold Voltage	g1	-245 ± 10MHz/%	V_B^-	Elongated multilayer hBN flake of uniform thickness transfer	—

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Samples

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create VB^- centers for strain sensing.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.

Elongated multilayer hBN flake of uniform thickness transferred onto a flexible polyimide substrate, clamped with a 100-nm Au coating, and implanted with nitrogen to create V_B^- centers for strain sensing.