Numerical study of Valence Band states evolution in AlxGa1-xAs [111] QDs systems

M. Lazarev

doi:10.48550/arxiv.2301.03490

Paper details

Research paper

Theoretical

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

M. Lazarev

unpublished manuscript·2025·10.48550/arxiv.2301.03490·arXiv:2301.03490

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

5 properties

Simulated Supercell DftGaAsStudied MaterialAlxGa₁-xAsSimulated Alloy

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

2 properties

Simulated Supercell DftGaAsStudied MaterialAlxGa₁-xAsSimulated Alloy

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

4 properties

Simulated Supercell DftGaAsStudied MaterialAlxGa₁-xAsSimulated Alloy

Materials

GaAs

Studied Material

studied material

AlxGa₁-xAs

Simulated Alloy

Also known as

AlGaAs

Variables

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Numerical study of Valence Band states evolution in AlxGa1-xAs [111] QDs systems | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Critical Thickness	HH-LH crossover thickness	13nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Critical Thickness	HH-LH crossover thickness	14nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	applied field for representative optical spectra	20000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	maximum feasible simulated field	30000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.8percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in vertical barrier cylinders	7.2percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.7percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	nominal Al content in QD core	20percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Effective Composition	nominal Al content in external barriers	40percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	QD thickness	7nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	barrier thickness	5nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Critical Thickness	HH-LH crossover thickness	13nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Critical Thickness	HH-LH crossover thickness	14nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	applied field for representative optical spectra	20000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	maximum feasible simulated field	30000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.8percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in vertical barrier cylinders	7.2percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.7percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	nominal Al content in QD core	20percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Effective Composition	nominal Al content in external barriers	40percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	QD thickness	7nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	barrier thickness	5nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Critical Thickness	HH-LH crossover thickness	13nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Critical Thickness	HH-LH crossover thickness	14nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	applied field for representative optical spectra	20000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	maximum feasible simulated field	30000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.8percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in vertical barrier cylinders	7.2percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.7percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	nominal Al content in QD core	20percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Effective Composition	nominal Al content in external barriers	40percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	QD thickness	7nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	barrier thickness	5nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Critical Thickness	HH-LH crossover thickness	13nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Critical Thickness	HH-LH crossover thickness	14nm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	applied field for representative optical spectra	20000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Electric Field	maximum feasible simulated field	30000V/cm	GaAs AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.8percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in vertical barrier cylinders	7.2percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	effective Al content in QD core cylinder	2.7percent	AlxGa₁-xAs	Simulated single GaAs quantum dot embedded in AlxGa₁-xAs bar		—
Effective Composition	nominal Al content in QD core	20percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Effective Composition	nominal Al content in external barriers	40percent	AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	QD thickness	7nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Geometry Parameter	barrier thickness	5nm	GaAs AlxGa₁-xAs	Simulated quantum dot molecule (QDM) consisting of two coupl		—
Pl Peak Fwhm	PL peak	2meV	GaAs	—	—	—

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Numerical study of Valence Band states evolution in AlxGa₁-xAs [111] QDs systems

Samples

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 10 nm, diameter 18 nm, in an inverted-pyramid geometry.

Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.

Simulated quantum dot molecule (QDM) consisting of two coupled GaAs quantum dots embedded in AlxGa₁-xAs barriers; representative parameters include QD thickness 7 nm and barrier thickness 5 nm.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations