Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.
Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.
Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.
Simulated single GaAs quantum dot embedded in AlxGa₁-xAs barriers, thickness t = 14 nm, diameter 18 nm, under an applied electric field along the growth direction.
