Abstract

Emerging ultra-wide band gap semiconductors for future high-frequency electronics. The paper discusses the limitations of incumbent RF and power semiconductors and presents a high-throughput DFT screening of 1300 compounds from the Inorganic Crystal Structures Database to evaluate n- and p-type Johnson and Baliga high-frequency figures of merit in combination with thermal conductivity. The study identifies alternative candidate semiconductors for future high-frequency electronics and discusses dopability and synthesis considerations for selected materials.

Abstract

Emerging ultra-wide band gap semiconductors for future high-frequency electronics. The paper discusses the limitations of incumbent RF and power semiconductors and presents a high-throughput DFT screening of 1300 compounds from the Inorganic Crystal Structures Database to evaluate n- and p-type Johnson and Baliga high-frequency figures of merit in combination with thermal conductivity. The study identifies alternative candidate semiconductors for future high-frequency electronics and discusses dopability and synthesis considerations for selected materials.

Abstract

Emerging ultra-wide band gap semiconductors for future high-frequency electronics. The paper discusses the limitations of incumbent RF and power semiconductors and presents a high-throughput DFT screening of 1300 compounds from the Inorganic Crystal Structures Database to evaluate n- and p-type Johnson and Baliga high-frequency figures of merit in combination with thermal conductivity. The study identifies alternative candidate semiconductors for future high-frequency electronics and discusses dopability and synthesis considerations for selected materials.

Abstract

Emerging ultra-wide band gap semiconductors for future high-frequency electronics. The paper discusses the limitations of incumbent RF and power semiconductors and presents a high-throughput DFT screening of 1300 compounds from the Inorganic Crystal Structures Database to evaluate n- and p-type Johnson and Baliga high-frequency figures of merit in combination with thermal conductivity. The study identifies alternative candidate semiconductors for future high-frequency electronics and discusses dopability and synthesis considerations for selected materials.