Tight-binding transport and band-structure simulations using the Slonczewski-Weiss-McClure parametrization in Kwant; electrostatic gating modeled with displacement field and chemical potential profiles; magnetic-field-dependent magnetotransport.Kwant
Tight-binding transport and band-structure simulations using the Slonczewski-Weiss-McClure parametrization in Kwant; electrostatic gating modeled with displacement field and chemical potential profiles; magnetic-field-dependent magnetotransport.Kwant
Tight-binding transport and band-structure simulations using the Slonczewski-Weiss-McClure parametrization in Kwant; electrostatic gating modeled with displacement field and chemical potential profiles; magnetic-field-dependent magnetotransport.Kwant
Tight-binding transport and band-structure simulations using the Slonczewski-Weiss-McClure parametrization in Kwant; electrostatic gating modeled with displacement field and chemical potential profiles; magnetic-field-dependent magnetotransport.Kwant