Abstract

We propose a semiconductor-free negative differential resistance tunnel diode concept based on two cold metal electrodes separated by a thin insulating tunnel barrier. Using density functional theory and nonequilibrium Green function transport calculations, we demonstrate lateral AlI₂/MgI₂/AlI₂ and vertical NbS₂/h-BN/NbS₂ heterojunction tunnel diodes. The lateral device shows a Λ-type NDR effect with an ultra-high peak-to-valley current ratio of 1016 at room temperature, while the vertical device shows conventional N-type NDR with PVCR of about 10⁴.

Abstract

We propose a semiconductor-free negative differential resistance tunnel diode concept based on two cold metal electrodes separated by a thin insulating tunnel barrier. Using density functional theory and nonequilibrium Green function transport calculations, we demonstrate lateral AlI₂/MgI₂/AlI₂ and vertical NbS₂/h-BN/NbS₂ heterojunction tunnel diodes. The lateral device shows a Λ-type NDR effect with an ultra-high peak-to-valley current ratio of 1016 at room temperature, while the vertical device shows conventional N-type NDR with PVCR of about 10⁴.

Abstract

We propose a semiconductor-free negative differential resistance tunnel diode concept based on two cold metal electrodes separated by a thin insulating tunnel barrier. Using density functional theory and nonequilibrium Green function transport calculations, we demonstrate lateral AlI₂/MgI₂/AlI₂ and vertical NbS₂/h-BN/NbS₂ heterojunction tunnel diodes. The lateral device shows a Λ-type NDR effect with an ultra-high peak-to-valley current ratio of 1016 at room temperature, while the vertical device shows conventional N-type NDR with PVCR of about 10⁴.

Abstract

We propose a semiconductor-free negative differential resistance tunnel diode concept based on two cold metal electrodes separated by a thin insulating tunnel barrier. Using density functional theory and nonequilibrium Green function transport calculations, we demonstrate lateral AlI₂/MgI₂/AlI₂ and vertical NbS₂/h-BN/NbS₂ heterojunction tunnel diodes. The lateral device shows a Λ-type NDR effect with an ultra-high peak-to-valley current ratio of 1016 at room temperature, while the vertical device shows conventional N-type NDR with PVCR of about 10⁴.