Abstract

Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, the authors show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. They further show that charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. The study argues that accurate modeling of defect charge state is necessary for electrically controlling defects.

Abstract

Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, the authors show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. They further show that charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. The study argues that accurate modeling of defect charge state is necessary for electrically controlling defects.

Abstract

Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, the authors show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. They further show that charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. The study argues that accurate modeling of defect charge state is necessary for electrically controlling defects.

Abstract

Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, the authors show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. They further show that charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. The study argues that accurate modeling of defect charge state is necessary for electrically controlling defects.