Research paper
Computational DFTTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic Parameter | chemical potential mu | 525.045meV | — | |||
| Electronic Parameter | hopping parameter t | 2550.67meV | — | |||
| Electronic Parameter | staggered potential delta | -0.595meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIA | 0.067meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIB | -0.29meV | — | |||
| Electronic Parameter | Rashba parameter lambdaR | -1.496meV | — | |||
| Electronic Parameter | Rashba angle phiR | -22.975deg | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic Parameter | chemical potential mu | 525.045meV | — | |||
| Electronic Parameter | hopping parameter t | 2550.67meV | — | |||
| Electronic Parameter | staggered potential delta | -0.595meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIA | 0.067meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIB | -0.29meV | — | |||
| Electronic Parameter | Rashba parameter lambdaR | -1.496meV | — | |||
| Electronic Parameter | Rashba angle phiR | -22.975deg | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic Parameter | chemical potential mu | 525.045meV | — | |||
| Electronic Parameter | hopping parameter t | 2550.67meV | — | |||
| Electronic Parameter | staggered potential delta | -0.595meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIA | 0.067meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIB | -0.29meV | — | |||
| Electronic Parameter | Rashba parameter lambdaR | -1.496meV | — | |||
| Electronic Parameter | Rashba angle phiR | -22.975deg | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Electronic Parameter | chemical potential mu | 525.045meV | — | |||
| Electronic Parameter | hopping parameter t | 2550.67meV | — | |||
| Electronic Parameter | staggered potential delta | -0.595meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIA | 0.067meV | — | |||
| Electronic Parameter | intrinsic SOC lambdaIB | -0.29meV | — | |||
| Electronic Parameter | Rashba parameter lambdaR | -1.496meV | — | |||
| Electronic Parameter | Rashba angle phiR | -22.975deg | — |