Abstract

We combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to tailor intrinsic nonlinear susceptibility and enhance electromagnetic fields within the heterostructure. By engineering a resonant interband transition, the work reports a large second-order nonlinear tensor element and an effective enhancement when accessed through a metasurface.

Abstract

We combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to tailor intrinsic nonlinear susceptibility and enhance electromagnetic fields within the heterostructure. By engineering a resonant interband transition, the work reports a large second-order nonlinear tensor element and an effective enhancement when accessed through a metasurface.

Abstract

We combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to tailor intrinsic nonlinear susceptibility and enhance electromagnetic fields within the heterostructure. By engineering a resonant interband transition, the work reports a large second-order nonlinear tensor element and an effective enhancement when accessed through a metasurface.

Abstract

We combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to tailor intrinsic nonlinear susceptibility and enhance electromagnetic fields within the heterostructure. By engineering a resonant interband transition, the work reports a large second-order nonlinear tensor element and an effective enhancement when accessed through a metasurface.