Self-aligned hybrid nanocavities using atomically thin materials

C. F. Fong; D. Yamashita; N. Fang; S. Fujii; Y.-R. Chang; T. Taniguchi; K. Watanabe; Y. K. Kato

doi:10.1021/acsphotonics.3c01927

Paper details

Research paper

Experimental CharacterizationComputational MultiscaleOther ComputationalComputed Phonon

Self-aligned hybrid nanocavities using atomically thin materials

C. F. Fong, D. Yamashita, N. Fang, S. Fujii et al.

arXiv·2023·10.1021/acsphotonics.3c01927·arXiv:2308.10566

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

1 preparation3 characterizations9 properties1 figure

ExperimentalBNStudied MaterialSiSubstrate / Dielectric

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

1 preparation1 characterization1 property1 figure

ExperimentalMoTe₂Studied MaterialSiSubstrate / Dielectric

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

2 properties

WSe₂Studied MaterialSiSubstrate / Dielectric

Materials

hBN

Studied Material

Also known as

hexagonal boron nitridehBN

studied material

WSe₂

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Self-aligned hybrid nanocavities using atomically thin materials | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon photonic-crystal slab thickness	200nm	Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	hBN flake thickness	20nm	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Width	hBN lateral width along waveguide	12lattice_constants	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	WSe₂ flake thickness	10nm	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Flake Width	WSe₂ lateral width along waveguide	14lattice_constants	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Q Factor	broad cavity peak loaded Q	22000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Q Factor	narrow cavity peak loaded Q	380000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	broad cavity peak wavelength	1330.34nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	narrow cavity peak wavelength	1330.61nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	broad cavity peak linewidth	60.2pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	narrow cavity peak linewidth	3.54pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Cavity Purcell Factor	Purcell enhancement factor	15dimensionless	MoTe₂ Si	MoTe₂ flake transferred onto a silicon photonic-crystal wave		—
PL Peak	regex-detected PL peak	1336nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon photonic-crystal slab thickness	200nm	Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	hBN flake thickness	20nm	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Width	hBN lateral width along waveguide	12lattice_constants	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	WSe₂ flake thickness	10nm	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Flake Width	WSe₂ lateral width along waveguide	14lattice_constants	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Q Factor	broad cavity peak loaded Q	22000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Q Factor	narrow cavity peak loaded Q	380000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	broad cavity peak wavelength	1330.34nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	narrow cavity peak wavelength	1330.61nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	broad cavity peak linewidth	60.2pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	narrow cavity peak linewidth	3.54pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Cavity Purcell Factor	Purcell enhancement factor	15dimensionless	MoTe₂ Si	MoTe₂ flake transferred onto a silicon photonic-crystal wave		—
PL Peak	regex-detected PL peak	1336nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon photonic-crystal slab thickness	200nm	Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	hBN flake thickness	20nm	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Width	hBN lateral width along waveguide	12lattice_constants	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	WSe₂ flake thickness	10nm	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Flake Width	WSe₂ lateral width along waveguide	14lattice_constants	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Q Factor	broad cavity peak loaded Q	22000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Q Factor	narrow cavity peak loaded Q	380000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	broad cavity peak wavelength	1330.34nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	narrow cavity peak wavelength	1330.61nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	broad cavity peak linewidth	60.2pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	narrow cavity peak linewidth	3.54pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Cavity Purcell Factor	Purcell enhancement factor	15dimensionless	MoTe₂ Si	MoTe₂ flake transferred onto a silicon photonic-crystal wave		—
PL Peak	regex-detected PL peak	1336nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon photonic-crystal slab thickness	200nm	Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	hBN flake thickness	20nm	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Width	hBN lateral width along waveguide	12lattice_constants	BN	Post-fabrication hBN flake transferred onto an air-suspended		—
Flake Thickness	WSe₂ flake thickness	10nm	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Flake Width	WSe₂ lateral width along waveguide	14lattice_constants	WSe₂	Simulated WSe₂ flake partially covering a silicon W₁ photoni		—
Q Factor	broad cavity peak loaded Q	22000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Q Factor	narrow cavity peak loaded Q	380000dimensionless	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	broad cavity peak wavelength	1330.34nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Resonance Wavelength	narrow cavity peak wavelength	1330.61nm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	broad cavity peak linewidth	60.2pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Linewidth	narrow cavity peak linewidth	3.54pm	BN Si	Post-fabrication hBN flake transferred onto an air-suspended		—
Cavity Purcell Factor	Purcell enhancement factor	15dimensionless	MoTe₂ Si	MoTe₂ flake transferred onto a silicon photonic-crystal wave		—
PL Peak	regex-detected PL peak	1336nm	—	—	—	—

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

Self-aligned hybrid nanocavities using atomically thin materials

Samples

Post-fabrication hBN flake transferred onto an air-suspended silicon photonic-crystal waveguide to form a hybrid nanocavity device.

MoTe₂ flake transferred onto a silicon photonic-crystal waveguide device to create a self-aligned hybrid cavity with observed PL enhancement.

Simulated WSe₂ flake partially covering a silicon W₁ photonic-crystal waveguide for cavity-design calculations.

Materials

Why these are connected

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