Abstract

We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities due to its narrower bandgap, while emission from the blue QW is more significant at higher current densities due to its reduced quantum confined stark effect (QCSE) and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, we also show that the effective active region in these V-pit-engineered InGaN/GaN LEDs is roughly 2 to 3 QWs on the p-GaN side, with limited interwell carrier transport and recombination in additional QWs.

Abstract

We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities due to its narrower bandgap, while emission from the blue QW is more significant at higher current densities due to its reduced quantum confined stark effect (QCSE) and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, we also show that the effective active region in these V-pit-engineered InGaN/GaN LEDs is roughly 2 to 3 QWs on the p-GaN side, with limited interwell carrier transport and recombination in additional QWs.

Abstract

We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities due to its narrower bandgap, while emission from the blue QW is more significant at higher current densities due to its reduced quantum confined stark effect (QCSE) and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, we also show that the effective active region in these V-pit-engineered InGaN/GaN LEDs is roughly 2 to 3 QWs on the p-GaN side, with limited interwell carrier transport and recombination in additional QWs.

Abstract

We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities due to its narrower bandgap, while emission from the blue QW is more significant at higher current densities due to its reduced quantum confined stark effect (QCSE) and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, we also show that the effective active region in these V-pit-engineered InGaN/GaN LEDs is roughly 2 to 3 QWs on the p-GaN side, with limited interwell carrier transport and recombination in additional QWs.