Research paperComputational MultiscaleTheoreticalComputed PLTandem Photovoltaics from 2D Transition Metal Dichalcogenides on SiliconZekun Hu, Sudong Wang, Jason Lynch, Deep Jariwala2025·10.1126/science.aad2114·arXiv:2406.10470AbstractThe study investigates a tandem photovoltaic architecture comprising a top-cell with a transition metal dichalcogenide superlattice absorber and a bottom-cell of crystalline silicon, using transfer matrix method and electrical simulations to optimize geometry and performance. A six-layer MoSe₂ configuration with a 40 nm SiO₂ antireflective layer is found to maximize absorptance, and the optimized tandem design reaches a power conversion efficiency of 30.94%, compared with 23.28% for a single-junction c-Si solar cell.Read more
Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.5 propertiesSimulatedMoSe₂Studied MaterialAl₂O₃Substrate / DielectricBNSubstrate / DielectricExpand
Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.3 propertiesSimulatedMoSe₂Studied MaterialExpand
Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.1 propertySimulatedSiStudied MaterialSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricExpand
Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.3 propertiesSimulatedMoSe₂Studied MaterialSiStudied MaterialAl₂O₃Substrate / DielectricSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricAgCapping Or ContactAuCapping Or ContactAlCapping Or ContactExpand
Research paperComputational MultiscaleTheoreticalComputed PLTandem Photovoltaics from 2D Transition Metal Dichalcogenides on SiliconZekun Hu, Sudong Wang, Jason Lynch, Deep Jariwala2025·10.1126/science.aad2114·arXiv:2406.10470AbstractThe study investigates a tandem photovoltaic architecture comprising a top-cell with a transition metal dichalcogenide superlattice absorber and a bottom-cell of crystalline silicon, using transfer matrix method and electrical simulations to optimize geometry and performance. A six-layer MoSe₂ configuration with a 40 nm SiO₂ antireflective layer is found to maximize absorptance, and the optimized tandem design reaches a power conversion efficiency of 30.94%, compared with 23.28% for a single-junction c-Si solar cell.Read more
Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.5 propertiesSimulatedMoSe₂Studied MaterialAl₂O₃Substrate / DielectricBNSubstrate / DielectricExpand
Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.3 propertiesSimulatedMoSe₂Studied MaterialExpand
Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.1 propertySimulatedSiStudied MaterialSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricExpand
Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.3 propertiesSimulatedMoSe₂Studied MaterialSiStudied MaterialAl₂O₃Substrate / DielectricSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricAgCapping Or ContactAuCapping Or ContactAlCapping Or ContactExpand
Research paperComputational MultiscaleTheoreticalComputed PLTandem Photovoltaics from 2D Transition Metal Dichalcogenides on SiliconZekun Hu, Sudong Wang, Jason Lynch, Deep Jariwala2025·10.1126/science.aad2114·arXiv:2406.10470AbstractThe study investigates a tandem photovoltaic architecture comprising a top-cell with a transition metal dichalcogenide superlattice absorber and a bottom-cell of crystalline silicon, using transfer matrix method and electrical simulations to optimize geometry and performance. A six-layer MoSe₂ configuration with a 40 nm SiO₂ antireflective layer is found to maximize absorptance, and the optimized tandem design reaches a power conversion efficiency of 30.94%, compared with 23.28% for a single-junction c-Si solar cell.Read more
Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.5 propertiesSimulatedMoSe₂Studied MaterialAl₂O₃Substrate / DielectricBNSubstrate / DielectricExpand
Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.3 propertiesSimulatedMoSe₂Studied MaterialExpand
Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.1 propertySimulatedSiStudied MaterialSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricExpand
Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.3 propertiesSimulatedMoSe₂Studied MaterialSiStudied MaterialAl₂O₃Substrate / DielectricSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricAgCapping Or ContactAuCapping Or ContactAlCapping Or ContactExpand
Research paperComputational MultiscaleTheoreticalComputed PLTandem Photovoltaics from 2D Transition Metal Dichalcogenides on SiliconZekun Hu, Sudong Wang, Jason Lynch, Deep Jariwala2025·10.1126/science.aad2114·arXiv:2406.10470AbstractThe study investigates a tandem photovoltaic architecture comprising a top-cell with a transition metal dichalcogenide superlattice absorber and a bottom-cell of crystalline silicon, using transfer matrix method and electrical simulations to optimize geometry and performance. A six-layer MoSe₂ configuration with a 40 nm SiO₂ antireflective layer is found to maximize absorptance, and the optimized tandem design reaches a power conversion efficiency of 30.94%, compared with 23.28% for a single-junction c-Si solar cell.Read more
Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.5 propertiesSimulatedMoSe₂Studied MaterialAl₂O₃Substrate / DielectricBNSubstrate / DielectricExpand
Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.3 propertiesSimulatedMoSe₂Studied MaterialExpand
Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.1 propertySimulatedSiStudied MaterialSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricExpand
Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.3 propertiesSimulatedMoSe₂Studied MaterialSiStudied MaterialAl₂O₃Substrate / DielectricSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricAgCapping Or ContactAuCapping Or ContactAlCapping Or ContactExpand
