Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Zekun Hu; Sudong Wang; Jason Lynch; Deep Jariwala

doi:10.1126/science.aad2114

Paper details

Research paper

Computational MultiscaleTheoreticalComputed PL

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Zekun Hu, Sudong Wang, Jason Lynch, Deep Jariwala

2025·10.1126/science.aad2114·arXiv:2406.10470

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

5 properties

SimulatedMoSe₂Studied MaterialAl₂O₃Substrate / DielectricBNSubstrate / Dielectric

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

3 properties

SimulatedMoSe₂Studied Material

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

1 property

SimulatedSiStudied MaterialSiO₂Substrate / Dielectricnitride layerSubstrate / Dielectric

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

3 properties

SimulatedMoSe₂Studied MaterialSiStudied MaterialAl₂O₃Substrate / DielectricSiO₂Substrate / Dielectricnitride layerSubstrate / DielectricAgCapping Or ContactAuCapping Or ContactAlCapping Or Contact

Materials

MoS₂

Studied Material

studied material

MoSe₂

Studied Material

studied material

WS₂

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Absorptance Peak	total absorption below 850 nm	near-unity	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	superlattice photon density	64700000000000000cm⁻² s⁻¹	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	bulk photon density	69700000000000000cm⁻² s⁻¹	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	top-cell PCE	12.43%	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Power Conversion Efficiency	bulk MoSe₂ PCE	5%	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	tandem PCE	30.94%	MoSe₂ Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency	single-junction c-Si PCE	23.28%	Si	Crystalline silicon bottom cell with nitride antireflective		—
Power Conversion Efficiency Contribution	top-cell contribution to tandem PCE	12.43%	MoSe₂	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency Contribution	bottom-cell contribution to tandem PCE	18.51%	Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Optical Band Gap	monolayer MoSe₂ bandgap	1.55eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Optical Band Gap	bulk MoSe₂ bandgap	1.1eV	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Optical Band Gap	effective electrical bandgap	2.12eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Exciton Binding Energy	exciton binding energy	0.57eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Absorptance Peak	total absorption below 850 nm	near-unity	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	superlattice photon density	64700000000000000cm⁻² s⁻¹	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	bulk photon density	69700000000000000cm⁻² s⁻¹	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	top-cell PCE	12.43%	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Power Conversion Efficiency	bulk MoSe₂ PCE	5%	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	tandem PCE	30.94%	MoSe₂ Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency	single-junction c-Si PCE	23.28%	Si	Crystalline silicon bottom cell with nitride antireflective		—
Power Conversion Efficiency Contribution	top-cell contribution to tandem PCE	12.43%	MoSe₂	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency Contribution	bottom-cell contribution to tandem PCE	18.51%	Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Optical Band Gap	monolayer MoSe₂ bandgap	1.55eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Optical Band Gap	bulk MoSe₂ bandgap	1.1eV	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Optical Band Gap	effective electrical bandgap	2.12eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Exciton Binding Energy	exciton binding energy	0.57eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Absorptance Peak	total absorption below 850 nm	near-unity	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	superlattice photon density	64700000000000000cm⁻² s⁻¹	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	bulk photon density	69700000000000000cm⁻² s⁻¹	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	top-cell PCE	12.43%	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Power Conversion Efficiency	bulk MoSe₂ PCE	5%	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	tandem PCE	30.94%	MoSe₂ Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency	single-junction c-Si PCE	23.28%	Si	Crystalline silicon bottom cell with nitride antireflective		—
Power Conversion Efficiency Contribution	top-cell contribution to tandem PCE	12.43%	MoSe₂	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency Contribution	bottom-cell contribution to tandem PCE	18.51%	Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Optical Band Gap	monolayer MoSe₂ bandgap	1.55eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Optical Band Gap	bulk MoSe₂ bandgap	1.1eV	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Optical Band Gap	effective electrical bandgap	2.12eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Exciton Binding Energy	exciton binding energy	0.57eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Optical Absorptance Peak	total absorption below 850 nm	near-unity	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	superlattice photon density	64700000000000000cm⁻² s⁻¹	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Photon Density	bulk photon density	69700000000000000cm⁻² s⁻¹	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	top-cell PCE	12.43%	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Power Conversion Efficiency	bulk MoSe₂ PCE	5%	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Power Conversion Efficiency	tandem PCE	30.94%	MoSe₂ Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency	single-junction c-Si PCE	23.28%	Si	Crystalline silicon bottom cell with nitride antireflective		—
Power Conversion Efficiency Contribution	top-cell contribution to tandem PCE	12.43%	MoSe₂	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Power Conversion Efficiency Contribution	bottom-cell contribution to tandem PCE	18.51%	Si	Full tandem photovoltaic architecture combining the MoSe₂ to		—
Optical Band Gap	monolayer MoSe₂ bandgap	1.55eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Optical Band Gap	bulk MoSe₂ bandgap	1.1eV	MoSe₂	Bulk-like MoSe₂ top-cell comparator with the same total acti		—
Optical Band Gap	effective electrical bandgap	2.12eV	MoSe₂	Optimized six-layer MoSe₂ superlattice top cell with insulat		—
Exciton Binding Energy	exciton binding energy	0.57eV	—	—	—	—

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon

Samples

Optimized six-layer MoSe₂ superlattice top cell with insulating spacer layers used in the tandem photovoltaic model.

Bulk-like MoSe₂ top-cell comparator with the same total active thickness of 4.2 nm.

Crystalline silicon bottom cell with nitride antireflective layer and SiO₂-related stack components as described in the tandem design.

Full tandem photovoltaic architecture combining the MoSe₂ top cell and c-Si bottom cell with contacts and dielectric layers.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

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Simulations

Characterization

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Simulations

Characterization

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Simulations