Research paper
Experimental CharacterizationToward All 2D-based Printed Raindrop Triboelectric Nanogenerators
Foad Ghasemi, Jonas Heirich, Dimitri Sharikow, Sebastian Klenk et al.
2025
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations1 property1 figure
2 preparations4 characterizations12 properties4 figures
2 preparations3 characterizations2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations2 figures
3 preparations2 characterizations1 property1 figure
4 preparations2 characterizations1 figure
2 preparations1 characterization1 figure
2 preparations1 characterization2 figures
2 preparations4 characterizations1 property3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Mean Lateral Size | WS₂ medium-sized fraction | 152.2nm | — | |||
| Mean Layer Number | WS₂ medium-sized fraction | 9layers | — | |||
| Mean Lateral Size | WS₂ large fraction | 268nm | — | |||
| Mean Layer Number | WS₂ large fraction | 14.2layers | — | |||
| Mean Lateral Size | WS₂ small fraction | 69.6nm | — | |||
| Mean Layer Number | WS₂ small fraction | 5.5layers | — | |||
| Extinction Thickness Slope | t vs Ext800 | 60 | — | |||
| Extinction Thickness Slope | Gr:CNT with 27 wt% SWCNTs | tGr:CNT=46.02Ext800 | — | |||
| Surface Coverage | WS₂ film coverage | uniform | — | |||
| Sheet Resistance | graphene film sheet resistance | —ohm/sq | — | |||
| Xps Atomic Fraction | — | 88.8% | — | |||
| Xps Atomic Fraction | — | 6.5% | — | |||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 18.6% | — | |||
| Xps Atomic Fraction | — | 4.1% | — | |||
| Xps Atomic Fraction | — | 5.6% | — | |||
| Xps Atomic Fraction | — | 1.6at. | — | |||
| Xps Atomic Fraction | — | 2.3at% | — |
Related documents with shared materials, methods, properties, or citations.
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations1 property1 figure
2 preparations4 characterizations12 properties4 figures
2 preparations3 characterizations2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations2 figures
3 preparations2 characterizations1 property1 figure
4 preparations2 characterizations1 figure
2 preparations1 characterization1 figure
2 preparations1 characterization2 figures
2 preparations4 characterizations1 property3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Mean Lateral Size | WS₂ medium-sized fraction | 152.2nm | — | |||
| Mean Layer Number | WS₂ medium-sized fraction | 9layers | — | |||
| Mean Lateral Size | WS₂ large fraction | 268nm | — | |||
| Mean Layer Number | WS₂ large fraction | 14.2layers | — | |||
| Mean Lateral Size | WS₂ small fraction | 69.6nm | — | |||
| Mean Layer Number | WS₂ small fraction | 5.5layers | — | |||
| Extinction Thickness Slope | t vs Ext800 | 60 | — | |||
| Extinction Thickness Slope | Gr:CNT with 27 wt% SWCNTs | tGr:CNT=46.02Ext800 | — | |||
| Surface Coverage | WS₂ film coverage | uniform | — | |||
| Sheet Resistance | graphene film sheet resistance | —ohm/sq | — | |||
| Xps Atomic Fraction | — | 88.8% | — | |||
| Xps Atomic Fraction | — | 6.5% | — | |||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 18.6% | — | |||
| Xps Atomic Fraction | — | 4.1% | — | |||
| Xps Atomic Fraction | — | 5.6% | — | |||
| Xps Atomic Fraction | — | 1.6at. | — | |||
| Xps Atomic Fraction | — | 2.3at% | — |
Related documents with shared materials, methods, properties, or citations.
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations1 property1 figure
2 preparations4 characterizations12 properties4 figures
2 preparations3 characterizations2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations2 figures
3 preparations2 characterizations1 property1 figure
4 preparations2 characterizations1 figure
2 preparations1 characterization1 figure
2 preparations1 characterization2 figures
2 preparations4 characterizations1 property3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Mean Lateral Size | WS₂ medium-sized fraction | 152.2nm | — | |||
| Mean Layer Number | WS₂ medium-sized fraction | 9layers | — | |||
| Mean Lateral Size | WS₂ large fraction | 268nm | — | |||
| Mean Layer Number | WS₂ large fraction | 14.2layers | — | |||
| Mean Lateral Size | WS₂ small fraction | 69.6nm | — | |||
| Mean Layer Number | WS₂ small fraction | 5.5layers | — | |||
| Extinction Thickness Slope | t vs Ext800 | 60 | — | |||
| Extinction Thickness Slope | Gr:CNT with 27 wt% SWCNTs | tGr:CNT=46.02Ext800 | — | |||
| Surface Coverage | WS₂ film coverage | uniform | — | |||
| Sheet Resistance | graphene film sheet resistance | —ohm/sq | — | |||
| Xps Atomic Fraction | — | 88.8% | — | |||
| Xps Atomic Fraction | — | 6.5% | — | |||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 18.6% | — | |||
| Xps Atomic Fraction | — | 4.1% | — | |||
| Xps Atomic Fraction | — | 5.6% | — | |||
| Xps Atomic Fraction | — | 1.6at. | — | |||
| Xps Atomic Fraction | — | 2.3at% | — |
Related documents with shared materials, methods, properties, or citations.
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations1 property1 figure
2 preparations4 characterizations12 properties4 figures
2 preparations3 characterizations2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations2 figures
3 preparations2 characterizations1 property1 figure
4 preparations2 characterizations1 figure
2 preparations1 characterization1 figure
2 preparations1 characterization2 figures
2 preparations4 characterizations1 property3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Mean Lateral Size | WS₂ medium-sized fraction | 152.2nm | — | |||
| Mean Layer Number | WS₂ medium-sized fraction | 9layers | — | |||
| Mean Lateral Size | WS₂ large fraction | 268nm | — | |||
| Mean Layer Number | WS₂ large fraction | 14.2layers | — | |||
| Mean Lateral Size | WS₂ small fraction | 69.6nm | — | |||
| Mean Layer Number | WS₂ small fraction | 5.5layers | — | |||
| Extinction Thickness Slope | t vs Ext800 | 60 | — | |||
| Extinction Thickness Slope | Gr:CNT with 27 wt% SWCNTs | tGr:CNT=46.02Ext800 | — | |||
| Surface Coverage | WS₂ film coverage | uniform | — | |||
| Sheet Resistance | graphene film sheet resistance | —ohm/sq | — | |||
| Xps Atomic Fraction | — | 88.8% | — | |||
| Xps Atomic Fraction | — | 6.5% | — | |||
| Xps Atomic Fraction | — | 2.1% | — | |||
| Xps Atomic Fraction | — | 18.6% | — | |||
| Xps Atomic Fraction | — | 4.1% | — | |||
| Xps Atomic Fraction | — | 5.6% | — | |||
| Xps Atomic Fraction | — | 1.6at. | — | |||
| Xps Atomic Fraction | — | 2.3at% | — |
Related documents with shared materials, methods, properties, or citations.
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors