Research paper
TheoreticalComputed Phonon| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Plasmonic Bandgap Width | complete plasmonic bandgap | 20cm⁻¹ | — | |||
| Conductivity Ratio | chi0 | 0.78 | — | |||
| Conductivity Ratio | chi | 0.5 | — | |||
| Electronic Broadening | electronic broadening factor | 1meV | — | |||
| Carrier Density | back-doped carrier density | 20000000000000cm⁻² | — |
Band-Structure-Independent Topology from Nonsymmorphic Wannier Complexes
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Plasmonic Bandgap Width | complete plasmonic bandgap | 20cm⁻¹ | — | |||
| Conductivity Ratio | chi0 | 0.78 | — | |||
| Conductivity Ratio | chi | 0.5 | — | |||
| Electronic Broadening | electronic broadening factor | 1meV | — | |||
| Carrier Density | back-doped carrier density | 20000000000000cm⁻² | — |
Band-Structure-Independent Topology from Nonsymmorphic Wannier Complexes
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Plasmonic Bandgap Width | complete plasmonic bandgap | 20cm⁻¹ | — | |||
| Conductivity Ratio | chi0 | 0.78 | — | |||
| Conductivity Ratio | chi | 0.5 | — | |||
| Electronic Broadening | electronic broadening factor | 1meV | — | |||
| Carrier Density | back-doped carrier density | 20000000000000cm⁻² | — |
Band-Structure-Independent Topology from Nonsymmorphic Wannier Complexes
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Plasmonic Bandgap Width | complete plasmonic bandgap | 20cm⁻¹ | — | |||
| Conductivity Ratio | chi0 | 0.78 | — | |||
| Conductivity Ratio | chi | 0.5 | — | |||
| Electronic Broadening | electronic broadening factor | 1meV | — | |||
| Carrier Density | back-doped carrier density | 20000000000000cm⁻² | — |
Band-Structure-Independent Topology from Nonsymmorphic Wannier Complexes