Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure

Paper details

Research paper

Experimental Characterization

Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe₂ Heterostructure

Hui-Ying Ren, Yue Mao, Ya-Ning Ren, Qing-Feng Sun et al.

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 characterizations4 properties2 figures

ExperimentalCStudied MaterialWSe₂Studied MaterialWSe₂Studied MaterialWSe₂Studied Material

graphene

Studied Material

Variables

dimensionality= monolayer

studied material

WSe₂

Studied Material

Also known as

Related documents with shared materials, methods, properties, or citations.

Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Electrostatic Barrier Height	1D barrier height	100meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Barrier Width	1D barrier width	1nm	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Potential Height	Coulomb-like potential height	500meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Boundary State Energy Range	localized boundary states	< -60meV	WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Electrostatic Barrier Height	1D barrier height	100meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Barrier Width	1D barrier width	1nm	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Potential Height	Coulomb-like potential height	500meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Boundary State Energy Range	localized boundary states	< -60meV	WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Electrostatic Barrier Height	1D barrier height	100meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Barrier Width	1D barrier width	1nm	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Potential Height	Coulomb-like potential height	500meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Boundary State Energy Range	localized boundary states	< -60meV	WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Electrostatic Barrier Height	1D barrier height	100meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Barrier Width	1D barrier width	1nm	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Electrostatic Potential Height	Coulomb-like potential height	500meV	C WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—
Boundary State Energy Range	localized boundary states	< -60meV	WSe₂	Graphene monolayer transferred onto a thick 2H-WSe₂ substrat	—