Research paper
TheoreticalOther Computational| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 1 | 0.29unitless | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 3.5 | 1.03unitless | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 1 | 0.29unitless | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 3.5 | 1.03unitless | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 1 | 0.29unitless | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 3.5 | 1.03unitless | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Wetting Angle | thetab (Ga on Si(111)) | 50deg | — | |||
| Wetting Angle | thetaw (Ga on SiO₂) | 116deg | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 1 | 0.29unitless | — | |||
| Critical Volume Ratio | maximum EDGE configuration volume fraction for R/h = 3.5 | 1.03unitless | — |