Research paperComputational MultiscaleTheoreticalWurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding ApproximationJoseph Sink, Craig PryorarXiv·2023·10.1063/5.0129007·arXiv:2306.12537AbstractWe present calculations of the electronic energies in GaAs nanowires containing various thicknesses of zincblende and wurtzite layers using a recently developed tight-binding model for wurtzite III-V semiconductors that is compatible with a zincblende model. By comparing results in the flat-band and the unscreened limits, we explain the sensitivity of experimentally observed band gaps on zincblende and wurtzite well widths. Our calculations suggest that experiments on devices are likely near the flat-band limit under typical operating conditions.Read more
Bulk wurtzite GaAs reference system used for material parameters and polarization/strain modeling.13 propertiesSimulatedGaAsStudied MaterialExpand
Bulk zincblende GaAs reference system used for material parameters and polarization/strain modeling.6 propertiesSimulatedGaAsStudied MaterialExpand
GaAs polytype heterostructure superlattice comprising alternating wurtzite and zincblende segments along the growth axis.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational MultiscaleTheoreticalWurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding ApproximationJoseph Sink, Craig PryorarXiv·2023·10.1063/5.0129007·arXiv:2306.12537AbstractWe present calculations of the electronic energies in GaAs nanowires containing various thicknesses of zincblende and wurtzite layers using a recently developed tight-binding model for wurtzite III-V semiconductors that is compatible with a zincblende model. By comparing results in the flat-band and the unscreened limits, we explain the sensitivity of experimentally observed band gaps on zincblende and wurtzite well widths. Our calculations suggest that experiments on devices are likely near the flat-band limit under typical operating conditions.Read more
Bulk wurtzite GaAs reference system used for material parameters and polarization/strain modeling.13 propertiesSimulatedGaAsStudied MaterialExpand
Bulk zincblende GaAs reference system used for material parameters and polarization/strain modeling.6 propertiesSimulatedGaAsStudied MaterialExpand
GaAs polytype heterostructure superlattice comprising alternating wurtzite and zincblende segments along the growth axis.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational MultiscaleTheoreticalWurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding ApproximationJoseph Sink, Craig PryorarXiv·2023·10.1063/5.0129007·arXiv:2306.12537AbstractWe present calculations of the electronic energies in GaAs nanowires containing various thicknesses of zincblende and wurtzite layers using a recently developed tight-binding model for wurtzite III-V semiconductors that is compatible with a zincblende model. By comparing results in the flat-band and the unscreened limits, we explain the sensitivity of experimentally observed band gaps on zincblende and wurtzite well widths. Our calculations suggest that experiments on devices are likely near the flat-band limit under typical operating conditions.Read more
Bulk wurtzite GaAs reference system used for material parameters and polarization/strain modeling.13 propertiesSimulatedGaAsStudied MaterialExpand
Bulk zincblende GaAs reference system used for material parameters and polarization/strain modeling.6 propertiesSimulatedGaAsStudied MaterialExpand
GaAs polytype heterostructure superlattice comprising alternating wurtzite and zincblende segments along the growth axis.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational MultiscaleTheoreticalWurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding ApproximationJoseph Sink, Craig PryorarXiv·2023·10.1063/5.0129007·arXiv:2306.12537AbstractWe present calculations of the electronic energies in GaAs nanowires containing various thicknesses of zincblende and wurtzite layers using a recently developed tight-binding model for wurtzite III-V semiconductors that is compatible with a zincblende model. By comparing results in the flat-band and the unscreened limits, we explain the sensitivity of experimentally observed band gaps on zincblende and wurtzite well widths. Our calculations suggest that experiments on devices are likely near the flat-band limit under typical operating conditions.Read more
Bulk wurtzite GaAs reference system used for material parameters and polarization/strain modeling.13 propertiesSimulatedGaAsStudied MaterialExpand
Bulk zincblende GaAs reference system used for material parameters and polarization/strain modeling.6 propertiesSimulatedGaAsStudied MaterialExpand
GaAs polytype heterostructure superlattice comprising alternating wurtzite and zincblende segments along the growth axis.1 propertySimulatedGaAsStudied MaterialExpand